A.M. Chugg scite author profile

A new method is presented and demonstrated to quantify the leakage currents in Intermittently Stuck Bits (ISB's) in SDRAM's, which have been exposed to neutron or proton irradiation. It is argued that these ISB's are caused by Single Particle Displacement Damage Effects (SPDDE's), in the form of displacement damage complexes comprising one or more damage clusters. The leakage current histories of ISB's are compared with a model of the behavior of the displacement damage complexes believed to cause the ISB's.

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Broadening of the variance of the number of upsets in a read-cycle by MBUs

Chugg¹,

Moutrie²,

Jones³

2004

IEEE Trans. Nucl. Sci.

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Single Event Effects in Power MOSFETs Due to Atmospheric and Thermal Neutrons

Hands

Morris

Ryden

et al. 2011

IEEE Trans. Nucl. Sci.

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Analyses of images of neutron interactions and single particle displacement damage in CCD arrays

Chugg¹,

Jones²,

Moutrie³

et al. 2004

IEEE Trans. Nucl. Sci.

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A Statistical Technique to Measure the Proportion of MBU's in SEE Testing

Chugg¹,

Moutrie²,

Burnell³

et al. 2006

IEEE Trans. Nucl. Sci.

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Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility

Jones¹,

Chugg²,

Jones³

et al. 2000

IEEE Trans. Nucl. Sci.

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A.M. Chugg

Single particle dark current spikes induced in CCDs by high energy neutrons

The Random Telegraph Signal Behavior of Intermittently Stuck Bits in SDRAMs

Probing the Nature of Intermittently Stuck Bits in Dynamic RAM Cells

Broadening of the variance of the number of upsets in a read-cycle by MBUs

Single Event Effects in Power MOSFETs Due to Atmospheric and Thermal Neutrons

Analyses of images of neutron interactions and single particle displacement damage in CCD arrays

A Statistical Technique to Measure the Proportion of MBU's in SEE Testing

Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility

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