A Statistical Technique to Measure the Proportion of MBU's in SEE Testing

Chugg, A.M.; Moutrie, M.J.; Burnell, A.J.; Jones, R.

doi:10.1109/tns.2006.883907

Cited by 15 publications

(7 citation statements)

References 12 publications

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“…From the user's point of view, without any knowledge of the physical layout of the memory under test, heavy ions or proton irradiations provide a continuous stream of errors from which it could be only possible to determine the ratio of MBU to SEU rates [1], [2].…”

Section: Principle Of the Methodsmentioning

confidence: 99%

A Statistical Method to Extract MBU Without Scrambling Information

Falguère¹,

Petit²

2007

IEEE Trans. Nucl. Sci.

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Section: Principle Of the Methodsmentioning

confidence: 99%

A Statistical Method to Extract MBU Without Scrambling Information

Falguère¹,

Petit²

2007

IEEE Trans. Nucl. Sci.

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“…A possibility to perform this, addressed in [18,25], would be as follows: The experiment should be real-time controlled using a monitor platform, in such a way that periodical read-out/correct processes are performed in the memory. After the experiment starts, the first read-out process should happen at a pre-determined instant.…”

Section: Problem Definition: Error-per-event Calculation With Error Amentioning

confidence: 99%

“…Memories [10][11][12], due to their broad use and large area, are specially sensitive to radiation effects [13,14]. That is especially true for multiple bit upsets (MBUs) [15][16][17][18], whose impact accounts for a growing number of effects. Therefore, one critical issue for manufacturers is to categorize how a certain memory behaves within different radiation environments and study the sources of potential errors [19,20].…”

Section: Introductionmentioning

confidence: 99%

“…That may not be the case in some memories depending on their physical structure. In those situations, (18) can be modified to account for the specific probabilities of the different patterns. Those probabilities can be predicted to some degree from the memory design or can be estimated in a first pass of the estimation of p(2) and p(3) in expressions (14) and (15), and used in the second phase.…”

Section: Introduction Of False 3-bit Mbus Formed By the Accumulation mentioning

confidence: 99%

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A method to eliminate the event accumulation problem from a memory affected by multiple bit upsets

Maestro

Reviriego

2009

Microelectronics Reliability

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“…As the integration level grows, these memory cells become smaller, and the probability of MBUs increases. The importance of MBUs has been recently addressed in several papers [25]- [28], concluding that a growing number of errors are due to this fact.…”

Section: Introductionmentioning

confidence: 99%

Reliability Analysis of Memories Suffering Multiple Bit Upsets

Reviriego

Maestro

Cervantes

2007

IEEE Trans. Device Mater. Relib.

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The reliability of memory systems that are exposed to soft errors has been studied in the past with the aim of deriving the Mean Time to Failure (MTTF) and the probability of failing in a given time interval. On those studies, the soft errors were considered to arrive following a Poissonian basis and they were assumed to be single uncorrelated events (each event causes only one soft error). Recent studies suggest that Multiple Bit Upsets (MBUs) are a significant part of the error events in advanced memory technologies and that they will continue to grow in the next technology nodes. The errors in an MBU are normally caused by the same physical event and therefore affect memory cells that are close together. This poses a major problem to memories that are protected with per-word Single Error Correction codes, as an MBU is likely to affect two or more bits in the same word, causing an uncorrectable error. To avoid that problem, interleaving is used to ensure that cells that are physically close together belong to different logical words, so that the errors in an MBU are distributed over a number of words each suffering only one error. Although some works have been done that characterize memories under radiation tests, no mathematical model of the effect of MBUs on the reliability of a memory has been proposed in the literature, to the best of the authors' knowledge. Therefore, in this paper, the reliability of memories suffering MBUs is analyzed in detail. The fundamental result from that analysis is that the MTTF of a memory exposed to MBUs can be approximated using the existing results for single event upsets by adjusting the error arrival rate.

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A Statistical Technique to Measure the Proportion of MBU's in SEE Testing

Cited by 15 publications

References 12 publications

A Statistical Method to Extract MBU Without Scrambling Information

A Statistical Method to Extract MBU Without Scrambling Information

A method to eliminate the event accumulation problem from a memory affected by multiple bit upsets

Reliability Analysis of Memories Suffering Multiple Bit Upsets

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