Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Abstract

The Single Event Burnout sensitive volume of power MOSFETs is investigated using the laser Two-Photon Absorption Technique. A first discussion about the efficiency of this technique is given.

Spatial resolution of soft-error sensitive-depth analysis by scanning two-photon absorption laser microscopy

“…It is recommended that an xyzstage with Δz stg = 0.01 μm or Δz stg = 0.001 μm be used for scanning TPA laser microscopy for soft-error analysis. The results of this work may also be applicable to radiationinduced latchups 17) and burnouts, 15) because RPP models are widely used in representing their SVs.…”

“…In fact, previous TPA analyses successfully visualized SVs in some devices such as a power MOSFET. 15) However, it is not considered feasible that TPA can extract SVs from highly-scaled devices such as current LSIs. This is because the typical size of a TPA charge spot is 10 μm in the depth (z) direction 16,17) and the resultant z-resolution is assumed to be too large to detect z sv , which represents the SV depth and is typically 1−3 μm.…”