Evaluation of accelerated total dose testing of linear bipolar circuits

Carrière, T.; Ecoffet, R.; Poirot, P.

doi:10.1109/23.903776

Cited by 32 publications

(4 citation statements)

References 12 publications

(8 reference statements)

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“…For many ICs, it has been shown that the input current in the input transistors is a good indicator of current gain degradation, at least for moderate total dose levels [11], before the device degradation saturates [12]. In this work, the investigated critical parameter is thus the input current [13], [14]. The excess current, called excess here, was normalized to its pre-irradiation value according to the following equation: (1) where and are the base current value before and after irradiation, respectively.…”

Section: Methodsmentioning

confidence: 99%

Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs

Boch

Saigné

Schrimpf

et al. 2004

IEEE Trans. Nucl. Sci.

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The effect of high temperature irradiations has been investigated on four types of commercial linear bipolar integrated circuits (ICs) at eight temperatures ranging from 25 C to 150 C for different total doses at a given dose rate. In agreement with results obtained for individual bipolar transistors, the results show that an optimum irradiation temperature exists that leads to a maximum amount of degradation. Results are compared to low dose rate (LDR) irradiations for ICs with npn and pnp input transistors.Index Terms-Dose rate, elevated temperature irradiation, integrated circuit (IC), total dose.

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Section: Methodsmentioning

confidence: 99%

Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs

Boch

Saigné

Schrimpf

et al. 2004

IEEE Trans. Nucl. Sci.

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“…For example, it will take about 4 months to accumulate 100 krad(Si) when performing at typical LDR (0.01 rad(Si)/s) experiment. So, several accelerated test techniques have been attempted to evaluate ELDRS, such as (i) elevated temperature irradiation (ETI), [3,10] (ii) irradiation with molecular hydrogen, [6,11] (iii) the switched dose rate technique, [12,13] and (iv) the switched temperature irradiation. [14][15][16] Among them, switched temperature technique, proposed by Lu et al [14] as a promising and applicable accelerated ELDRS test method, has been demonstrated on a series of bipolar devices by experimental verification.…”

Section: Introductionmentioning

confidence: 99%

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Lü

Wang

et al. 2018

Chinese Phys. B

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The mechanisms occurring when the switched temperature technique is applied, as an accelerated enhanced low dose rate sensitivity (ELDRS) test technique, are investigated in terms of a specially designed gate-controlled lateral PNP transistor (GLPNP) that used to extract the interface traps (Nit) and oxide trapped charges (Not). Electrical characteristics in GLPNP transistors induced by 60 Co gamma irradiation are measured in situ as a function of total dose, showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP. Based on the analysis of the variations of Nit and Not, with switching the temperature, the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation. Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup. In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP, which provides us with a new insight into the test technique for ELDRS.

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“…Accelerated total dose testing, i.e., experiments done at high dose rate and high temperature are shown to closely determine tolerance at very low dose rate and at room temperature (RT) [12]. Also, this is shown to be more valid for determining bias parameter degradation than offset parameters at low dose rate, at RT.…”

Section: Literature Reviewmentioning

confidence: 99%

A comparative study of gamma radiation effects on ultra-low input bias current linear circuits under biased conditions

Agarwal

Sundarsingh

Ramachandran

2005

IEEE Trans. Nucl. Sci.

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Abstract-Ultra-low input bias current linear circuits are used in several applications requiring them to work under varying conditions of temperature, humidity, radiation etc. which influence their performance. This paper presents a first time study of gamma radiation effects on ultra low input bias current linear circuits under biased conditions for small signal dc applications. Under biased conditions, radiation-induced photo currents play a significant role. A noncatastrophic radiation leakage environment has been considered. The linear circuits selected are of different makes and have different input stages, such as those based on JFET and MOS structures. Variations of dc characteristic parameters, such as input offset voltage and input bias current have been studied. Extensive experimental results are presented, including the effects of annealing, on critical parameters. It is seen that these devices behave differently on exposure to gamma radiation, depending on the structure of their input stage. The MOSFET-based stages show a greater change in input offset voltage, whereas FET-based input stages exhibit a greater change in input bias currents. Chopper stabilised linear circuits exhibit lesser deviation in their offset voltages and bias currents due to an inherent chopping action at their input stage that automatically compensates for any variations in these parameters.

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Evaluation of accelerated total dose testing of linear bipolar circuits

Cited by 32 publications

References 12 publications

Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs

Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

A comparative study of gamma radiation effects on ultra-low input bias current linear circuits under biased conditions

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