Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Li, Xiaolong; Lü, Wei; Wang, Xin; Yu, Xin; Guo, Qi; Sun, Jing; Liu, Mohan; Shuai, Yao; Wei, Xinyu; He, Chengfa

doi:10.1088/1674-1056/27/3/036102

Cited by 7 publications

(2 citation statements)

References 23 publications

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“…There are more holes escaping from the initial electron-hole recombination being transported to the interface, where they release protons and then depassivate the Si dangling bonds [19,20,22] which are hydrogen passivated in the fabrication process, creating more interface trap charges under the low dose rate irradiation than at high dose rates. Furthermore, hydrogen molecules generated by the hydrogen dimer of Equation (4) will crack at the shallow oxide traps as shown in Equation 5and behave as a source of protons, increasing the interface trap charge [23] and leading to an increase of degradation rate in the third stage under high dose rates.…”

Section: Discussionmentioning

confidence: 99%

Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor

Liu

Lü

et al. 2019

Electronics

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The latent enhanced low dose rate sensitivity (ELDRS) effect is observed in the double-polysilicon self-aligned (DPSA) technology PNP bipolar junction transistor (BJT) irradiated with a high and low dose rate gamma ray, which is discussed from the perspective of the three-stage degradation rate of the excess base current. The great degradation rate as a result of the high dose irradiation of the first stage is dominantly ascribed to the positive oxide trap charges accumulated during a short irradiation, and then due to the competition between the recombination of electrons and capture of the hole by the traps. It declined sharply into a degradation rate saturated region of the second stage. However, for the low dose rate, the small increase in the degradation rate in the first stage is caused by the holes escaping from the initial recombination and being transported to the interface to form the interface states. Then, the competition between the steadily increasing interfacial trap charge and the continuously annealed shallow level oxide trap charge leads to the stable increase of degradation under low dose irradiation. Finally, in stage three, the increases of the degradation rates for high and low dose irradiation result from the different amounts of the hydrogen molecules generated by the hole reactive with depassiviated Si suspended bonds, which can interact with the deep level defects and release protons, causing an increase of interfacial trap charges with prolonged irradiation.

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Section: Discussionmentioning

confidence: 99%

Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor

Liu

Lü

et al. 2019

Electronics

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“…The devices were manufactured using a commercial IC process by the State Key Laboratory of Analog Integrated Circuit, China, and are of high quality (with a large initial current gain of about 110 and a small initial base current of about 0.1 μA under V BE = −0.6 V). The layout and cross-section diagram can be found in refs –. This effect disappears for a dose rate of 10 mrad(Si)/s and above (Figure ).…”

Section: Introductionmentioning

confidence: 89%

Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

Zhang,

Yang,

Zhou

et al. 2023

ACS Appl. Electron. Mater.

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We observe an anomalous early recovery behavior of base currents in silicon PNP transistors irradiated by 60 Co γ-rays at a dose rate below 1 mrad(Si)/s, which, however, disappears for a higher dose rate. The physical origin of this effect is thoroughly investigated by combining methods of defect concentration measurement, first-principles calculation, and kinetic modeling. The concentrations of interface traps and oxide-trapped charges in these transistors are found to increase monotonically as the total dose increases. Meanwhile, first-principles calculations show that γ-induced concentrated carrier clusters in n-type Si can greatly promote the diffusion of nearby electrically active vacancy-oxygen (VO) defect complexes. Therefore, the observed anomalous behavior of base current is attributed to an irradiation-induced annealing of preexisting defects in Si at room temperature because moving VO can encounter interstitial oxygen atoms and transform into electrically inactive VO 2 . A kinetic model is derived for the observable base current by combining this mechanism with the ionization-induced buildup of defects in the SiO 2 −Si structure. It can uniformly describe the anomalous behavior at low dose rates and the normal behavior at high dose rates by considering the difference in the time of carrier action on the defect diffusion. Our work demonstrates that low-dose-rate γ irradiation is an effective method to realize defect engineering in semiconductors.

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Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors

Hong-Yu

Zhang

Duan

et al. 2023

J Mater Sci: Mater Electron

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Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Cited by 7 publications

References 23 publications

Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor

Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor

Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors

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