Articles you may be interested inResistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices J. Vac. Sci. Technol. A 32, 061505 (2014); 10.1116/1.4896329 Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells J. Appl. Phys. 115, 094305 (2014); 10.1063/1.4867639Effect of Hf incorporation in solution-processed NiOx based resistive random access memory Appl. Phys. Lett.

The authors investigated the data retention properties of NiOy resistors exposed to sputtered particles and found that they depended on the bias polarity used to program the data. Only the data in the high resistance state programmed by applying positive bias to the top electrode were easily damaged. This suggests that the “reset” process can take place when the anodic side of the conductive filaments, which were formed during the “forming” process, is insulated. In addition, the data retention test for thermal stress suggests that the reset process can take place thermally.

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Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures Appl. Phys. Lett.Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications

Properties of intrinsic gettering of Fe were studied by measuring Fe-B complex concentration and interstitial Fe concentration in a denuded zone after isochronal or isothermal annealing followed by quenching using deep level transient spectroscopy. We calculated the Fe concentration as the Fe-B complex concentration plus the interstitial Fe concentration. Silicon wafers were contaminated with a surface Fe concentration of 4.2×1011 to 3.2×1013 cm−2 to show the relation between Fe concentration in the wafer and the temperature at which gettering occurs. Supersaturation of Fe impurities was found necessary for intrinsic gettering of Fe in the contamination range of 4.0×1012 to 3.5×1014 cm−3. Therefore, the gettering temperature is lower for low-level Fe contamination than for high-level contamination. The reduction of Fe concentration saturated with annealing time, which shows that the oxygen precipitates in the bulk defect region do not work as an infinite gettering sink. We found that the saturated Fe concentration follows a simple Arrhenius relationship, so that gettering stops at the thermal equilibrium concentration. We think that in intrinsic gettering, Fe precipitates preferentially in the bulk defect region when the Fe impurities supersaturate with decreasing temperature.

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The electronic properties of the ferrous ion in [Fe(H20),](YH,)2(S0,), are investigated using far-infrared (FIR) Fourier transform spectra and FIREPR measurements at low temperatures in the energy range from 8 to 100cm-I. Several absorption lines can be identified to originate from electronic excitations of the ferrous ion.

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