Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides

Kinoshita, Kentaro; Tamura, Tetsuro; Aoki, Masaki; Sugiyama, Yoshihiro; Tanaka, Hitoshi

doi:10.1143/jjap.45.l991

Cited by 83 publications

(50 citation statements)

References 10 publications

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“…In order to confirm that the CS actually corresponds to the current path (filament) formation, we physically cut a device (500-μm-square) after forming at 5.3 V into two pieces as reported earlier 14) . They are parts A and B in .…”

Section: Resultsmentioning

confidence: 99%

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Kondo

Arita

Fujii

et al. 2011

Jpn. J. Appl. Phys.

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We succeeded to observe the "conduction spot" (CS) in the capacitor structure ReRAM, which includes a conductive filament. In this study, we used NiO prepared by thermal oxidation at high temperature as 800°C. It requires a forming process by extra high voltage, which partly removes the top electrode from the resistance switched area.These experiments enabled us to observe the conductive filament directly in CS on NiO ReRAM by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). From SEM images, CSs seem to be produced by some kind of breakdown, but we confirmed the reproducible resistance switching at least 50 cycles after the CS generation. By means of energy dispersive X-ray spectroscopy (EDX) with TEM observations, drastic oxygen reduction was recognized in local area within CS of NiO films. Moreover, the CS area depended on the injection power for forming. These experimental data suggest that miniaturization of ReRAM will be achieved by reducing the injection power for forming. *

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Section: Resultsmentioning

confidence: 99%

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Kondo

Arita

Fujii

et al. 2011

Jpn. J. Appl. Phys.

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“…[8,9] Also, RRAM [3,[10][11][12][13][14][15][16][17][18] has been studied as a possible candidate for new memory storage devices. RRAM is based on either transition metal oxides that exhibit unipolar switching properties [10][11][12] or perovskite materials displaying bipolar switching properties; [13][14][15] essentially, this is similar to PRAM where a resistance change is induced by applied electrical pulses. Here, we have focused on unipolar switching materials because of the advantages derived from the fact that only one-sided polarity is needed for bistable switching, resulting in the much simpler circuit design of memory devices.…”

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confidence: 99%

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

et al. 2008

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Universal memory, which combines the high-speed performance of present-day static random access memory (SRAM) [1] with the non-volatility of Flash [1] must realize several goals such as low operating current, size scalability, and compatibility with mass production to become a feasible memory alternative. The best approach towards the goal of high density is to utilize stackable structures with a crossbar geometry, [2] and to achieve low-temperature fabrication [3] while still retaining a selective switch (transistor or diode) as the data storage element. Thus for high-density applications, crossbar structures are ideal, whereas for non-volatility, resistance-change materials show the best promise. In order to realize the fabrication of universal memory elements, it is imperative to develop a class of materials and structures that combine robust processibility, strong scalability, and rapid programming speed with non-volatility and low power consumption. In our work, we have focused on defining just the storage node portion of the devices, which utilize the resistance change within the film to store information via two different stable resistance states. Here, we have attempted to determine the properties of such structures and to study the mechanisms behind resistance RAM (RRAM) storage. Our Ti-doped (0.1 wt %) NiO samples deposited at room temperature show favorable node characteristics such as the lowest write current reported thus far for a unipolar switching resistance-change-based device (ca. 10 lA). In addition, the programming speed is comparable to the write time of SRAM (10 ns). By combining this node element with an appropriate select switch, such as a high-performance diode, a threshold device, or a two-terminal non-ohmic device, it becomes possible to fabricate high-density universal memory. Indeed, the fabrication of universal memory as the next generation of non-volatile memory is the logical goal for research in this field. In comparison to Flash and dynamic RAM (DRAM), which are the current industry standards, next generation memories must combine the non-volatility of Flash with the high-speed performance of SRAM.[1] Several emerging non-volatile memory architectures have been investigated in order to fabricate materials that fit these specifications. [1,[4][5][6] For example, phase-change RAM (PRAM) [7] utilizes resistance switching accompanied by full or partial phase changes in chalcogenide materials induced by electrical pulses as a method for storing information. Recently, much effort has been devoted to investigations of magnetic race-track memory, a new concept in magnetic non-volatile memory involving the storage of information in the domain walls of materials. [8,9] Also, RRAM [3,[10][11][12][13][14][15][16][17][18] has been studied as a possible candidate for new memory storage devices. RRAM is based on either transition metal oxides that exhibit unipolar switching properties [10][11][12] or perovskite materials displaying bipolar switching properties; [13][14][15] essentially, this is...

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“…In particular, studies on resistance random access memories (RRAMs) [73][74][75][76][77][78][79] have become intensive because of their superior properties for achieving lower power consumption, larger-scale integration and higher speed. RRAM is designed to change the resistance of transition metal oxides (TMOs) via the application of a sufficiently high voltage [80]. However, the switching mechanism is not completely clarified.…”

Section: A Step Closer Towards Commercialization Ofmentioning

confidence: 99%

Surface as a Foundation to Realizing Designer Materials

Kasai

Diño

Kojima

et al. 2014

e-J. Surf. Sci. Nanotechnol.

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We entered the 21st Century witnessing several remarkable progress in Science and Technology. Novel materials and devices once considered stuffs of science fiction are, one after another, becoming reality. It would not be an exaggeration to say that we are coming to the Age of Designer Materials -Functional materials that have many varied and competing ground states, allowing us to switch the specific properties using external stimuli, e.g., heat, pressure, electric field, and magnetic field. Here, we present some non-traditional theoretical views developed in our group. The unifying themes are: quantum effects, complexity and functionality. We emphasize the unique role played by the Surface/Interface for providing a special environment (a foundation) for realizing Designer Materials, that are not realizable in the bulk and the strategic choice of particular elements as building blocks, e.g., for Exhaust Purification, Memory Devices and (Nano) Spintronics Applications.

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Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides

Cited by 83 publications

References 10 publications

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Surface as a Foundation to Realizing Designer Materials

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