Articles you may be interested inResistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices J. Vac. Sci. Technol. A 32, 061505 (2014); 10.1116/1.4896329 Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells J. Appl. Phys. 115, 094305 (2014); 10.1063/1.4867639Effect of Hf incorporation in solution-processed NiOx based resistive random access memory Appl. Phys. Lett.

The authors investigated the data retention properties of NiOy resistors exposed to sputtered particles and found that they depended on the bias polarity used to program the data. Only the data in the high resistance state programmed by applying positive bias to the top electrode were easily damaged. This suggests that the “reset” process can take place when the anodic side of the conductive filaments, which were formed during the “forming” process, is insulated. In addition, the data retention test for thermal stress suggests that the reset process can take place thermally.

We demonstrate that both a low resistance state and a high resistance state can be written by bipolar voltage application in a local region of NiO/Pt films by using conducting atomic force microscopy. To investigate how oxygen played a role in the resistance switching phenomenon, a local writing process in O18 tracer gas atmosphere was carried out and the composition change was examined by time-of-flight secondary ion mass spectroscopy. As a result, it was revealed that oxygen moves to the anode side, and the composition of the NiO surface might change thereby causing the change in resistance.

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Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures Appl. Phys. Lett.Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications