Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model

Sato, Yoshiaki; Kinoshita, Kentaro; Aoki, Masaki; Sugiyama, Yoshihiro

doi:10.1063/1.2431792

Cited by 119 publications

(108 citation statements)

References 5 publications

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“…9,13 The local current i flowing in part of the filament should provide Joule heating with power of i 2 r(T), raising T accordingly. Then, (r -r o ) ∝ i 2 .…”

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confidence: 99%

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Predictability of reset switching voltages in unipolar resistance switching

Lee

Chae

Chang

et al. 2009

Applied Physics Letters

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In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current I R , can be scaled to the nonlinear coefficient B o of the I-V curves, i.e., I R ∝ B o -x . This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO 2 and FeO y capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations. a) Electronic mail: twnoh@snu.ac.kr.

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“…9,13 The local current i flowing in part of the filament should provide Joule heating with power of i 2 r(T), raising T accordingly. Then, (r -r o ) ∝ i 2 .…”

mentioning

confidence: 99%

“…7 Joule heating has been well established to play a very important role in LRS. 1,[8][9][10][11][12][13] As the percolating conducting filament in LRS is metallic, its local resistance value r should be proportional to its local temperature T:…”

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confidence: 99%

Predictability of reset switching voltages in unipolar resistance switching

Lee

Chae

Chang

et al. 2009

Applied Physics Letters

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“…This supports the idea that the reset operation occurs based on the oxidation of the filaments. 17,20,21 The forming voltage of various positions selected by the tipshaped TE is summarized in Fig. 4(d), where the horizontal axis denotes the measurement sequence corresponding to time.…”

Section: Influence Of Oxygen In Reram Switchingmentioning

confidence: 99%

“…[10][11][12][13][14][15][16] Recent works reported that the "filamentredox-model" (in short, the "filament model") is influential in unipolar resistance switching. 4,[17][18][19][20][21] In the first process of this ReRAM operation, a relatively high voltage applied to the initial ReRAM film in the high resistance state (HRS, off-state) changes it to the low resistance state (LRS, onstate). This initializing operation is called "forming" and is carried out based on a current limitation (in other words, current compliance) to prevent permanent destruction of the device.…”

Section: Introductionmentioning

confidence: 99%

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

Fujii

Arita

Hamada

et al. 2013

Journal of Applied Physics

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We used thermal oxidization at various temperatures to prepare NiO/Pr-Ir for use in resistance random access memory (ReRAM) samples. In-situ transmission electron microscopy (TEM) was used to investigate the forming process of these ReRAM samples, where a needle-shaped top electrode of Pt-Ir was attached to the NiO/Pt-Ir ReRAM layer. The forming voltage initializing the NiO layer increased at an oxidization temperature of between 200 and 400 C. In this process, conductive bridges, which are thought to be conductive filaments of a ReRAM, appeared, and their sizes showed a correlation with the injection power. It was as small as about 300 nm 2 when the injection power was 10 À6 W. Energy dispersive X-ray spectroscopy was used to analyze the bridge, and it was experimentally confirmed that the oxygen content of the bridge was lower than that of the initial NiO layer. However, these bridges in the low resistance state did not show further ReRAM switching to the high resistance state inside of a TEM instrument. To check the reason of this result, we investigated samples outside of the TEM instrument, which had similar geometry to that of TEM specimens. They showed the ReRAM switching in air ambient but not in vacuum. Combining these results inside and outside of the TEM instrument, it can be concluded that the existence of oxygen around the conductive filament plays an important role. This supports the filament redox model on the ReRAM operation. V C 2013 American Institute of Physics.

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“…Some mechanisms suggest that filaments or bridge is ruptured ͑or broken͒ by Joule heating in conjunction with resistance of nanofilaments during voltage application. 9,10 Other mechanisms propose detrapping of electrons from conducting paths. 2,11 In any case, it is thought that the power, the product of current and voltage, controls the switching data distribution.…”

Section: ͑1͒mentioning

confidence: 99%

Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films

Yoo

Kang

Park

et al. 2008

Applied Physics Letters

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The behavior of unipolar resistance switching in NiO thin film was investigated. The switching current and the switching voltage alone did not follow statistical distribution. Instead, it was observed that product of switching current and switching voltage; namely, switching power follows Poisson’s distribution. An electrical manipulation—pulse train, for example—was suggested in order to minimize switching failure based on the above Poisson’s distribution behavior.

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Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model

Abstract: Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures Appl. Phys. Lett.Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications

Cited by 119 publications

References 5 publications

Predictability of reset switching voltages in unipolar resistance switching

Predictability of reset switching voltages in unipolar resistance switching

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films

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