Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

mrFPGA: A novel FPGA architecture with memristor-based reconfiguration

“…3a memristor is a two-terminal resistance-like device which can be fabricated between the top metal layer and the other metal layers on top of the transistor layer in the same die. As explained in [24,25], since no high temperature takes place during their memristor fabrication processes, the processes can be embedded after back-end-of-line process and will not ruin the transistors and metal wires which have been fabricated below the memristors, as shown in Fig. 3b.…”

“…Memristor can be programmed by applying specific programming voltage or current at its two terminals to switch its resistance value at normal operation between low state and high state. The resistance values at the two states are usually more than two orders of magnitude apart [24], or even up to six orders of magnitude apart [25]. In addition memristor can keep the resistance value set before being powered off without supply voltage.…”

“…For example, Fig. 3 is a schematic view and cross-sectional transmission electron microscopy (TEM) image of memristor fabricated by a CMOS-compatible process [24] for example. As shown in Fig.…”

“…We first intro-duce the memristor technology in this section. CMOS-compatibility is key property to integrate memristor into the mrFPGA architecture and several works have demonstrated CMOS-compatible memristor fabrication processes [10,24,25]. For example, Fig.…”

A 128 Kb HfO₂ ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement

“…And among a variety of new memory technology, the Resistive Random Access Memory (ReRAM) has the advantages of simple structure, fast read and write speed, low manufacturing cost, low power consumption and compatibility with CMOS process [1,2,3,4,5]. So it is considered as an excellent memory for the replacement of flash memory technology [6,7,8,9,10].…”