Articles you may be interested inResistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices J. Vac. Sci. Technol. A 32, 061505 (2014); 10.1116/1.4896329 Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells J. Appl. Phys. 115, 094305 (2014); 10.1063/1.4867639Effect of Hf incorporation in solution-processed NiOx based resistive random access memory Appl. Phys. Lett.

Bipolar resistive switching was found in thin polycrystalline TiO2 films formed by the thermal oxidation of sputtered Ti films. With a Ag top electrode, TiO2 film, and Pt bottom electrode, bistable resistive switching with a low operating voltage and a good uniformity was observed repeatedly without an initial electrical “forming” process. This switching phenomenon might be described as the formation and rupture of a filamentary conductive path consisting of a chain of Ag atoms. The temperature dependence of the switching voltage is discussed in terms of interstitial ionic diffusion of Ag in the TiO2 matrix.

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The authors report “field-programmable rectification” in crystals of rutile TiO2. A “programming” voltage is applied between two Pt electrodes on the surface of a crystal. Afterwards, current can pass in the direction of the programming voltage, but not in the reverse direction. The polarity of the rectification can be reversed by applying a programming voltage of opposite sign. The effect was observed on the (110) and (100) surfaces, but not the (001) surface. The proposed mechanism is field-induced motion of oxygen vacancies, which pile up under the negative terminal, eliminating a Schottky barrier, but leaving one at the positive terminal intact.

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