Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Abstract

Articles you may be interested inResistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices J. Vac. Sci. Technol. A 32, 061505 (2014); 10.1116/1.4896329 Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells J. Appl. Phys. 115, 094305 (2014); 10.1063/1.4867639Effect of Hf incorporation in solution-processed NiOx based resistive random access memory Appl. Phys. Lett.

An overview of resistive random access memory devices

“…It was also found that the reset current (I reset ) of the device with the 1R configuration alone was larger than that of the 1T1R configuration. For the 1R configuration, I reset was saturated to greater than 2 mA, even for I comp < 1 mA, while for the 1T1R configuration I reset was lower than 1 mA for all the measured range [39]. …”

“…The improvements in the Cu/TiO x -ZrO 2 /Pt device might result from the modulation of the barrier height at the electrode/oxide interfaces. Kinoshita and Tsunoda et al [39] fabricated a 1T1R (one-transistor-one-resistance) configuration device, in which a cell transistor was used as a current limiter. In comparing the 1R and 1T1R devices, the resistive-switching parameters in the 1T1R configuration showed better uniformity.…”

Advancements in organic nonvolatile memory devices

“…Figure 6 shows how a misreading may occur in the read operation of a crossbar memory array. If three neighboring points (AA′, BB′, CC′) in a 2×2 crossbar matrix are in the ON state, then the fourth point DD′ will also be read as being in the ON state, whether or not it is in the OFF state, because the current can flow through the path D′B′BAA′C′CD [65][66][67][68]. Thus, it is necessary to implant switch components such as transistors or diodes to prevent unexpected crosstalk.…”

Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up

“…Such a high resistance ratio raises a potential challenge for the design of NV-SRAM cell, but most importantly on the OxRRAM device itself. A complete strategy that could be used for the improvement of the OxRRAM devices is composed by the following steps: use FORMING operation to obtain high R OFF values [22,23] and use W LP and the STORE timing to obtain the desired low R ON that satisfies the high R OFF /R ON condition required to obtain a 5-6σ yield. …”