No abstract

No abstract

Low temperature photoluminescence and Auger electron spectroscopy have been used to study chemical-vapor deposited SiO2 and SigN4 layers as encapsulants for high temperature annealing of GaAs. Silicon dioxide or silicon oxynitride layers allow out-diffusion of Ga, while suitably prepared rf plasma deposited SisN4 layers can be used to anneal GaAs with negligible Ga outdiffusion.

No abstract

No abstract

No abstract

No abstract

Differential resistivity and Hall-effect measurements have been utilized to study the annealing behavior and electrical carrier-distribution profiles of Be-implanted GaAs. A maximum of 90–100% electrical activation occurs during 900 °C anneals for implanted Be concentrations less than ∼5×1018 cm−3. For higher fluences, however, a heavily concentration-dependent diffusion is observed, and the measured electrical activation is complicated by outdiffusion of Be into the Si3N4 encapsulant. In these cases, a maximum in the electrical activation appears for annealing near 700 °C. Low-temperature (5 °K) photoluminescence substantiates previous findings that 900 °C annealing results in maximum optical activation and lattice recovery.