A new interpretation of "End" resistance measurements

Lee, K.; Shur, M. S.; Vu, T.T.; Roberts, P.C.T.; Helix, M.J.

doi:10.1109/edl.1984.25810

Cited by 46 publications

(11 citation statements)

References 2 publications

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“…further physical parameters of the ements were performed [8], can be written (1), where the drain resistance and R i the equivalent resistance occurring under the gate…”

Section: Resultsmentioning

confidence: 99%

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High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

Lecourt

Douvry

Defrance

et al. 2010

2010 Proceedings of the European Solid State Device Research Conference

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The fabrication of high transconductance AlGa /Ga high electron mobility transistors (HEMTs) grown on high-resistivity silicon substrate is reported with an AlGa barrier thickness of only 12.5 nm. A maximum DC current density of 655 mA/mm, a current gain cutoff frequency (F T ) of 75 GHz and a power-gain cutoff frequency (F MAX ) of 125 GHz are obtained for a 0.125 µm gate length transistor. The device provides a record peak extrinsic transconductance of 332 mS/mm and an intrinsic value of 509 mS/mm. To the authors' knowledge, the obtained transconductances are the highest reported values from AlGa /Ga devices grown on a Si(111) substrate. This performance demonstrates the potential of Ga transistors on silicon for low-cost microwave power applications.

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“…further physical parameters of the ements were performed [8], can be written (1), where the drain resistance and R i the equivalent resistance occurring under the gate…”

Section: Resultsmentioning

confidence: 99%

“…To determine the further physical parameters of the devices, "end" resistance measurements were performed [8], [9]. The following set of equations can be written (1), where R s is the static source resistance, R d the drain resistance and R the equivalent resistance occurring under the gate metallization.…”

Section: A DC Characteristicsmentioning

confidence: 99%

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

Lecourt

Douvry

Defrance

et al. 2010

2010 Proceedings of the European Solid State Device Research Conference

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“…Series source and drain resistances (R S and R D ) are good indices of the surface states of the device. End resistance measurement [11] was employed to evaluate the series resistances. Measured source and drain resistances are summarized in Table 2.…”

Section: Optical Response and Series Resistancesmentioning

confidence: 99%

Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

Mizutani

Ohno

Akita

et al. 2002

phys. stat. sol. (a)

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Drain current collapse in AlGaN/GaN HEMTs has been studied in detail. Applying negative gate bias stress to the device caused a serious current collapse. Spatially resolved light illumination on the device combined with the measurement of series source and drain resistances revealed that the collapse was caused by the electrons trapped at the surface states between the gate and drain electrodes. Passivation of the device surface with Si3N4 film eliminated the current collapse.

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“…Using end-resistance measurement [16], the source resistance at different temperatures have been obtained. It increased from 3.5 Ωmm at RT to 4.2 Ωmm at 150…”

Section: Resultsmentioning

confidence: 99%

High temperature characteristics of doped channel AlGaN/GaN MIS‐HFETs with thin AlGaN barrier layer

Wang

Maeda

Hiroki

et al. 2006

Phys. Status Solidi (c)

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PACS 72.80. Ey, 73.40.Qv, 85.30.Tv The device performance of AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) with a very thin AlGaN barrier and a heavily doped GaN channel for high 2DEG density has been investigated at elevated temperatures up to 250• C. The devices exhibited ultra-low gate current leakages under the reverse gate bias with very reasonable transconductance characteristics at both RT and high temperatures. MIS-HFETs with doped channel showed much higher saturation drain current and weaker current collapse than the conventional devices at RT and high temperatures.

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A new interpretation of "End" resistance measurements

Cited by 46 publications

References 2 publications

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

High temperature characteristics of doped channel AlGaN/GaN MIS‐HFETs with thin AlGaN barrier layer

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