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Drain current collapse in AlGaN/GaN HEMTs has been studied in detail. Applying negative gate bias stress to the device caused a serious current collapse. Spatially resolved light illumination on the device combined with the measurement of series source and drain resistances revealed that the collapse was caused by the electrons trapped at the surface states between the gate and drain electrodes. Passivation of the device surface with Si3N4 film eliminated the current collapse.

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