Study of Encapsulants for Annealing GaAs

Vaidyanathan, K. V.; Helix, M.J.; Wolford, D. J.; Streetman, B. G.; Blattner, R. J.; Evans, C. A.

doi:10.1149/1.2133156

Cited by 90 publications

(13 citation statements)

References 17 publications

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“…12 It is also known that annealing without dielectric caps results in the loss of As from the sample surface, hence, generating a large number of group V vacancies. 13 These observations suggest that, although As outdiffusion ͑and hence, the generation of group V point defects͒ does not have a great impact on intermixing, it may cause broadening of the PL linewidth from the dots. Conversely, when Ga outdiffusion, and hence, group III point defect generation, is used to control the intermixing of the QDs, narrowing in the emission linewidth from the dots is achieved.…”

Section: Methodsmentioning

confidence: 97%

Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixing

Bhattacharyya

Helmy

Bryce

et al. 2000

Journal of Applied Physics

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Selective postgrowth control of the photoluminescence ͑PL͒ wavelength has been demonstrated for a single layer self-organized In 0.5 Ga 0.5 As/GaAs quantum dot ͑QD͒ structure. This was achieved by rapid thermal processing of dots using different dielectric caps. Selective band gap shifts of over 100 meV were obtained between samples capped with sputtered and plasma enhanced silica deposition, with the band gap shift under regions covered with plasma enhanced chemical vapor deposition SiO 2 less than 70 meV. The effects of different caps on the PL linewidth were also observed. The differential band gap shift will enable the integration of passive and active devices in QD systems.

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Section: Methodsmentioning

confidence: 97%

Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixing

Bhattacharyya

Helmy

Bryce

et al. 2000

Journal of Applied Physics

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“…IFVD utilizes Ga out-diffusion into dielectric caps at elevated temperatures to introduce group-III point defects [27]. Since its discovery [28], it has been widely used to fabricate OEIC's and PIC's [12], [14].…”

Section: Kinetics Of Ifvdmentioning

confidence: 99%

Quantitative model for the kinetics of compositional intermixing in GaAs-AlGaAs quantum-confined heterostructures

Helmy

Aitchison

Marsh

1998

IEEE J. Select. Topics Quantum Electron.

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A quantitative atomic-scale model for the kinetics of intermixing in GaAs-AlGaAs quantum-confined heterostructures is presented. The model takes into account the statistical nature of the defect diffusion through heterostructures and calculates its effect on the Ga-Al interdiffusion across the associated interfaces. The model has been validated by successfully predicting the observed amounts of bandgap shift induced by the process of hydrogen plasma induced defect layer intermixing, as well as for the process of impurity-free vacancy disordering using SiO2 caps. Good agreement between calculated and measured bandgap shifts has been observed. Values of the group-III vacancy diffusion coefficient, where the agreement took place, are between 2 and 3 2 exp[02:72=kBT ] cm 2 1s 01 . Index Terms-Diffusion processes, quantum heterostructures, quantum-well interdiffusion, quantum wells.

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“…The dangling bonds in the amorphous SiO 2 act as sources of point defects. 17) The point defect in the SiO 2 film diffuses into the semiconductor during heating assisted by the strain caused by the difference in thermal expansion coefficient between the semiconductor and the SiO 2 film. 18) The thickness of the SiO 2 film was varied from 30 to 500 nm to investigate the effect of the amount of introduced point defects.…”

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confidence: 99%

Shape control of AlGaAs selective oxidation by intermixing method

Gi¹,

Miyamoto²

2016

Jpn. J. Appl. Phys.

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Shape control of AlGaAs selective oxidation regions by heterointerface intermixing was investigated. The oxidation rate dependence on the intermixing conditions was characterized. Under 880 °C with three hours of intermixing, the oxidation rate was reduced to half that of the usual oxidation without intermixing. The thicknesses of a GaAs capping layer and a deposited SiO2 layer affected the oxidation rate. A detailed analysis of the oxidation after intermixing was carried out by scanning transmission electron microscopy (STEM) measurement. On the basis of the oxidation characteristics with intermixing, in-plane shape control was demonstrated. This result will be helpful in the fabrication of complicated device shapes.

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Study of Encapsulants for Annealing GaAs

Cited by 90 publications

References 17 publications

Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixing

Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixing

Quantitative model for the kinetics of compositional intermixing in GaAs-AlGaAs quantum-confined heterostructures

Shape control of AlGaAs selective oxidation by intermixing method

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