R.F. plasma deposition of silicon nitride layers

Helix, M.J.; Vaidyanathan, K. V.; Streetman, B. G.; Dietrich, H. B.; Chatterjee, P.K.

doi:10.1016/0040-6090(78)90082-2

Cited by 65 publications

(13 citation statements)

References 19 publications

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“…An rf plasma-deposited Si3N4 that is essentially oxygen-free (29) was used as an encapsulant to suppress thermal degradation during annealing. Depositions were performed at 350~ at a thickness of ~2300A on both sides of the samples.…”

Section: Experimental Methodsmentioning

confidence: 99%

SIMS Studies of 9Be Implants in Semi‐Insulating InP

Oberstar

Streetman

Baker

et al. 1982

J. Electrochem. Soc.

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The migration of implanted ~Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T I> 700~ t = 15-30 min) we have observed that implanted 9Be is a rapid diffusant in semi-insulating InP for fl~tences as low as 1 • 10 '3 cm -2. Redistribution of the compensating impurity (Fe or Cr) has also been observed. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550~ anneals of 100 keV, 10 '5 cm -2 9Be implanted materials. Models for this phenomenon are discussed. Correlations are noted between 9Be and compensating impurity profiles in annealed, high fluence implanted samples. Flat tails of 9Be extending over several microns are observed in semi-insulating InP.* Electrochemical Society Student Member * * Electrochemical Society Active Member. ABSTRACT Using secondary ion mass spectrometry (SIMS) the annealing characteristics of amorphizing implants of Mg andSi in semi-insulating InP have been examined. Substantial redistribution of Mg and Fe occurs during 30 rain anneals of InP implanted with i0 I~ cm -~, 250 keV Mg. Atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region. Examination of electron channelling patterns (ECP) from samples annealed for 30 rain at 550 ~ and 650~ show no discernible patterns at the surface or at depths near the theoretical damage profile peak. Weak channelling patterns are visible at the calculated peak damage depth, however, in samples annealed at 750~ for 30 and 60 rain. Flat tails of Mg extending over a distance of about 1 ~tm are seen in the bulk. Little redistribution of Si occurs during 30 rain, 750~ anneals of 5 • 10 TM cm -~, 240 keV Si implants. Redistribution of Fe is observed in these Si implanted samples, however, resulting in an accumulation region near the implanted Si peak.In the preceding paper, 9Be implants into semi-insulating InP were shown to result in considerable redistribution of Be, Fe, and Cr upon annealing. In this * Electrochem~.cal Society Student Member. ** Eleetrochemlcal Society Active Member.

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Section: Experimental Methodsmentioning

confidence: 99%

SIMS Studies of 9Be Implants in Semi‐Insulating InP

Oberstar

Streetman

Baker

et al. 1982

J. Electrochem. Soc.

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“…Extensive studies of remote RF PECVD have been carried out since 1978, when the remote plasma process was described by Helix [5] for the first time. Approximately 40 papers, mainly related to deposition of silicon based materials have been published.…”

Section: Remote Plasma Enhanced Cvd : Advantages and Disadvantagesmentioning

confidence: 99%

Remote PECVD : a Route to Controllable Plasma Deposition

Alexandrov

1995

J. Phys. IV France

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“…A version of the CVD process called remote plasma enhanced chemical vapor deposition (RPECVD), in which plasma is generated in the reaction chamber at a distance from the substrate seems promising [3,4]. The publications on PECVD processes deal primarily with applied issues, whereas their advantages and disadvantages and the influence of process parameters DOI: 10.1134/S1070363215050412 on the composition and properties of the resulting products have scarcely been discussed.…”

Section: Introductionmentioning

confidence: 99%

Regularities of remote plasma enhanced chemical vapor deposition of silicon nitride films

Alexandrov

2015

Russ J Gen Chem

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Specific features of remote plasma enhanced chemical vapor deposition processes with inductive and capacitive coupling of power have been analyzed. Experimental results from a study of the physical and chemical regularities of those processes have been considered. Influence of diluting nitrogen with noble gases on growth rate and composition of the deposited films has been discussed. Essential role of argon diluting providing a high concentration of atomic nitrogen in the reacting gas phase required for plasma chemical synthesis of nitride films was demonstrated. Possible approaches to further improvement of plasma enhanced chemical deposition processes have been proposed.

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R.F. plasma deposition of silicon nitride layers

Cited by 65 publications

References 19 publications

SIMS Studies of 9Be Implants in Semi‐Insulating InP

SIMS Studies of 9Be Implants in Semi‐Insulating InP

Remote PECVD : a Route to Controllable Plasma Deposition

Regularities of remote plasma enhanced chemical vapor deposition of silicon nitride films

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