The migration of implanted ~Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T I> 700~ t = 15-30 min) we have observed that implanted 9Be is a rapid diffusant in semi-insulating InP for fl~tences as low as 1 • 10 '3 cm -2. Redistribution of the compensating impurity (Fe or Cr) has also been observed. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550~ anneals of 100 keV, 10 '5 cm -2 9Be implanted materials. Models for this phenomenon are discussed. Correlations are noted between 9Be and compensating impurity profiles in annealed, high fluence implanted samples. Flat tails of 9Be extending over several microns are observed in semi-insulating InP.* Electrochemical Society Student Member * * Electrochemical Society Active Member. ABSTRACT Using secondary ion mass spectrometry (SIMS) the annealing characteristics of amorphizing implants of Mg andSi in semi-insulating InP have been examined. Substantial redistribution of Mg and Fe occurs during 30 rain anneals of InP implanted with i0 I~ cm -~, 250 keV Mg. Atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region. Examination of electron channelling patterns (ECP) from samples annealed for 30 rain at 550 ~ and 650~ show no discernible patterns at the surface or at depths near the theoretical damage profile peak. Weak channelling patterns are visible at the calculated peak damage depth, however, in samples annealed at 750~ for 30 and 60 rain. Flat tails of Mg extending over a distance of about 1 ~tm are seen in the bulk. Little redistribution of Si occurs during 30 rain, 750~ anneals of 5 • 10 TM cm -~, 240 keV Si implants. Redistribution of Fe is observed in these Si implanted samples, however, resulting in an accumulation region near the implanted Si peak.In the preceding paper, 9Be implants into semi-insulating InP were shown to result in considerable redistribution of Be, Fe, and Cr upon annealing. In this * Electrochem~.cal Society Student Member. ** Eleetrochemlcal Society Active Member.

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The redistribution of the compensating dopants, iron or chromium, in semi-insulating indium phosphide has been studied using secondary ion mass spectrometry. Annealing with silicon nitride encapsulation results in impurity accumulation within the first 1000A of the surface followed by depletion extending to a depth of ~1 ~m. Profiles resulting from the implantation of "neutral" elements (He, B) exhibit accumulation at the surface and also accumulation at the projected range peak. The profiles are explained in terms of gettering of the compensating dopant to defect-rich regions. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-05-27 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-05-27 to IP