SIMS Studies of 9Be Implants in Semi‐Insulating InP

Oberstar, J. D.; Streetman, B. G.; Baker, J. E.; Williams, Peter W.

doi:10.1149/1.2124127

Cited by 34 publications

(17 citation statements)

References 31 publications

(58 reference statements)

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“…In this case a maximum sheet hole concentration of 10 13 cm Ϫ2 and an electrical activation below 50% have been obtained instead. The values correlate with the broadening of the implant profile observed, due to inward diffusion of p-type dopants during the subsequent elevated temperature annealing, [18][19][20][21][22] required to recover the highdensity damage.…”

Section: Introductionmentioning

confidence: 70%

“…17 The electrical properties of implanted InP have been studied in several papers. [18][19][20][21][22][23][24][25] The results reported in the literature show that a high-peak carrier concentration of 10 19 cm Ϫ3 is achievable in substrated doped with n-type im-plants. the p-type dopants in InP are known to have lower activation efficiency.…”

Section: Introductionmentioning

confidence: 99%

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Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere

et al. 1999

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The effects of the ambient atmosphere in the annealing chamber on the electrical and structural characteristics of Zn-implanted III-V compound semiconductors, processed by low-power pulsed-laser annealing are presented. The samples were analyzed using several complementary experimental techniques: Reflection highenergy electron diffraction, Rutherford backscattering spectroscopy, Raman spectroscopy, secondary ion mass spectroscopy, and electrical measurements. During the laser beam irradiation in the presence of gas inlet into the annealing chamber the ambient gas atoms diffused well into the target changing the stoichiometry and the electrical parameters. Redistribution of the implanted impurity was also observed. By varying the type of gas used and its pressure, it was possible to achieve electrical activation of up to 80%. It seems all structure and electrical parameters achieve their best values at the same ambient atmosphere and density of the deposited laser power P, e.g., 1.5 atm of N 2 and Pϭ6.5 MW/cm 2 for InP.

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Section: Introductionmentioning

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere

et al. 1999

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“…C,-Si, O, S, Se were analysed by using Cs + primary ions, and recording negative secondary ions. The Cs ion beam of luA intensity, and of 14.5 KeV impact energy, was scanned over areas of about 500 urn 2 . The secondary ion extraction optics of the microanalyser was tuned either in the 150 pm mode (image field diameter equal to 60 um with the 750 um field aperture), or in the 25 pm mode (image field diameter equal to 10 pm with the 750 pm field aperture).…”

Section: Methodsmentioning

confidence: 99%

“…Among previous papers concerning depth profiles of dopants, or residual impurities, in this material we can quote XD. OBERSTAR et al [1][2][3] who studied depth distributions of Be, Mg, Fe and Si in as-implanted or annealed samples. This paper, firstly, reports the depth profiles of unannealed C, Si, O, S, Se implants, secondly, describes the behaviour of bulk dopants (Zn, Fe) in implanted or diffused layers.…”

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confidence: 99%

Application of Cesium Primary Beam to the Characterization of III.V Semiconductors by Sims

Gauneau¹,

Chaplain²,

Rupert³

1984

J. Phys. Colloques

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Ce travail décrit, d'une part, les profils en profondeur des éléments : C, Si, 0, S, Se, dans du phosphure d'indium non recuit, d'autre part le comportement après recuit, des dopants résiduels : Fe, Zn, dans des substrats implantés Si, Se, ou diffusés zinc. L'utilisation d'un faisceau d'ions césium permet d'obtenir une description précise des profils pour les éléments ayant une grande affinité électronique.

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“…If this sample is heated, the boron will diffuse, and subsequent SIMS depth profiles in aliquots of the implanted wafer treated for different times and temperatures could be used to quantify the diffusion. While ion implantation has been coupled with analyses of profiles by RBS, NRA and ERD for diffusion studies in minerals (e.g., Cherniak et al 1991Cherniak et al , 2009Ouchani et al 1998), this type of characterization (i.e., ion implantation with SIMS analyses) has mostly been limited to the semiconductor industry, where it is important to activate the electrical properties of dopants by annealing and to know how these trace elements (e.g., Be, B, and S) have migrated during the annealing step (e.g., Tsai et al 1979;Oberstar et al 1982;Wilson 1984). These studies demonstrate that in general, the damage to the crystal lattice from the implantation step results in more rapid diffusion of the implanted species to the surface than into the bulk.…”

Section: Ion Implantation and Simsmentioning

confidence: 99%

Analytical Methods in Diffusion Studies

Cherniak

Hervig

Koepke

et al. 2010

Reviews in Mineralogy and Geochemistry

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In this chapter, we provide an overview of analytical methods used in diffusion studies. These methods fall into two broad categories-direct profiling and bulk release/exchange. Direct profiling methods, where the concentration of diffusant vs. depth is determined, can employ a variety of techniques, and can access diffusivities ranging from ~10 −9 to 10 −24 m 2 /s. Among these methods are the "classical" techniques of serial sectioning and autoradiography, which, despite a long history of application in diffusion studies, are now rarely used, having been superseded by other analytical methods with better depth resolution and greater flexibility. Direct profiling can also be subdivided into methods involving step-scanning, with measurements made by stepping across a sample cut normal to the diffusion interface, and depth profiling, where analyses are performed parallel to the diffusion direction. Step-scanning may be used in cases where diffusion profiles are at least many tens of micrometers long, as it is limited by the beam spot size (typically ≥ 2 mm; although transmission electron microscopes have much better spatial resolution, they are not used extensively in diffusion studies dues to the difficulties in sample preparation) of the analytical tool used and the minimum number of points necessary to define the diffusion profile. The electron microprobe is used for diffusion measurements by step-scanning, as is the ion microprobe (Secondary Ion Mass Spectrometry, SIMS), and IR spectroscopy. SIMS instruments can also be used in depth profiling mode when smaller diffusion distances are measured. The accelerator-based ion beam techniques Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) and Elastic Recoil Detection (ERD) are also applied in measuring short diffusion distances. This group of techniques is capable of high depth resolution (~10 to a several tens of nm) and thus can be used

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SIMS Studies of 9Be Implants in Semi‐Insulating InP

Cited by 34 publications

References 31 publications

Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere

Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere

Application of Cesium Primary Beam to the Characterization of III.V Semiconductors by Sims

Analytical Methods in Diffusion Studies

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