Neutron activation analysis and secondary ion mass spectrometry were used to measure gallium profiles resulting from the diffusion of Ga into intrinsic silicon. The diffusion of the impurity was measured between 700 and 1100 °C. The diffusion coefficient in this wide temperature range follows the expression D=0.005 exp[−(2.70/kT)] cm2 sec−1. The possible intervention of surface effects in the diffusion kinetics is discussed. An estimate of the enthalpy of association of Ga vacancy is deduced. The solid solubility of gallium in silicon was measured in the same range and at various concentrations of donors and acceptors.
This paper reports on depth profiles of Mn implants, after annealing, obtained by secondary ion mass spectrometry. Two types of samples implanted with manganese were studied: unintentionally doped n-type (5–10×1015 e cm−3), and n-type S-doped (n=5×1018 e cm−3) substrates. In unintentionally doped substrates it is found that Mn exhibits a well-defined two-species diffusion front as other acceptors: Be, Zn, or Cd. On the contrary in S-doped substrates it does not move. The study of the correlations between the movement of the residual impurities and the implanted Mn atoms, or Zn in a comparative sample, has led us to propose a model based on an interstitial-substitutional reaction involving the impurity sites and taking place in the bulk of the semiconductor.
The post-annealing concentration profiles of Fe and Cr implants in undoped InP substrates are studied by secondary ion mass spectrometry. Annealing temperatures range from 550 to 750°C. Iron and chromium show similar behavior; the profiles are divided in three regions: the near surface zone where metals pile up, the zone in front of the projected range (Rp), around 0.8 Rp, where Fe and Cr atoms are trapped by residual damage, and a region around Rp + 11Rp, where a well-defined peak, with maximum concentration reaching 3-4 X 10 18 cm-3 , is observed. On each side of that peak, solute atoms are depleted down to the limit solubility: 1 X 10 17 cm-3 for iron, 2 X 10 16 cm -3 for chromium. The results are interpreted according to the calculations of L. A. Christel et al. [J. Appl. Phys. 52, 5050 (1981)] on stoichiometric disturbances in ion-implanted compound semiconductors.
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