Properties of Be-implanted planar GaAs p-n junctions

Helix, M.J.; Vaidyanathan, K. V.; Streetman, B. G.

doi:10.1109/jssc.1978.1051072

Cited by 18 publications

(6 citation statements)

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“…We estimate the Auger sensitivity to be approximately 0.1 a/o for oxygen and 0.5 a/o for gallium and arsenic in these measurements. Other investigators who have seen gallium out-diffusion in some silicon nitride encapsulating films have attributed the gallium out-diffusion to the presence of oxygen in the films (7,8,10).…”

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“…Among others, silicon nitride (Si3N4) has been used as an encapsulating film on ion implanted GaAs substrates (6)(7)(8)(9)(10). This film is an excellent mask against gallium and arsenic diffusion provided it has a sufficiently low oxygen content (7,8). Pyrolytic chemical vapor deposition, sputter deposition, or plasma chemical vapor deposition can be used for formation of the encapsulating silicon nitride film.…”

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confidence: 99%

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Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation

Valco

Kapoor

1987

J. Electrochem. Soc.

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The composition and annealing characteristics of plasma deposited silicon nitride encapsulating films on ion implanted gallium arsenide have been investigated. X-ray photoelectron spectroscopy was employed to study the surface of the semi-insulating GaAs substrates after cleaning in organic solvents, and HCt, HF, and NH4OH solutions prior to encapsulation. The composition of silicon nitride films deposited with 30 kHz RF excitation was determined through Auger electron spectroscopy and infrared spectroscopy as a function of the deposition conditions. Most of the films had a silicon to nitrogen ratio between 0.71 and 0.76 and a hydrogen concentration between 10 and 19%. GaAs substrates implanted with silicon at 100 keV to a dose of 5 • 1012 cm -2 and annealed at 800~ had peak electron concentrations of 1.7 • 1017 cm -3 at a depth of 0.1 ~m. High frequency encapsulated GaAs substrates implanted at 100 keV to a dose of 5 • 101~ cm -2 and 150 keV to a dose of 3 • 1012 cm -~ had peak electron concentrations of 1.7 • 1017 cm -3 and 9.6 • 101G cm 3 at depths of 0.1 and 0.12 ~tm, respectively. A Schottky-gate field effect transistor with a 3 ~m gate length which was fabricated using the silicon nitride encapsulant had a transconductance of 30 mS/ram.

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Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation

Valco

Kapoor

1987

J. Electrochem. Soc.

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“…This technique has the additional advantage of being compatible with nondestructive on-chip testing during processing, whereas the staining method in Ref (5). This technique has the additional advantage of being compatible with nondestructive on-chip testing during processing, whereas the staining method in Ref (5).…”

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“…(4). It has been demonstrated that p-n junctions can be fabricated in GaAs with beryllium ion implantation (5). However, the lateral diffusion during high temperature annealing was measured by'junction staining, which may not reveal surface diffusion between implant islands, which, for example, has been detected in Zn-diffused GaAsP using high sensitivity SEM techniques (6).…”

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Beryllium Ion‐Implanted Junctions in GaAs with Submicron Lateral Diffusion

Campbell

Baliga

1985

J. Electrochem. Soc.

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Beryllium ion implants in GaAs annealed at 900~ for 30 rain with a Si3N4 encapsulant have been shown to form p-n junctions with lateral diffusion between 0.5 and 1.0 ~m, junction depth of 0.7 ~m, and implant activation rate of -100%. SiO2 and phosphosilicate glass encapsulants yield similar values of lateral diffusion, junction depth, and activation rate, but are shown to induce near-surface degradation effects manifested by a reduced carrier concentration within 1.0 ~m of the surface in unimplanted annealed material and to produce anomalously high breakdown voltages and high leakage currents in Beimplanted junctions.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.15.241.167 Downloaded on 2015-03-09 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.15.241.167 Downloaded on 2015-03-09 to IP

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