“…The gate-drain breakdown walkout is believed to be caused by the creation and filling of electron traps between the gate and the drain, leading to widening of the depletion region and reducing the electric field [12,13]. End resistance measurements [14] indicate that the drain-to-channel resistance, R D , will increase by approximately 12% after hot-electron stresses, while on the source side only a slight decrease in R S , 0.2%, is observed. The increase in R D is consistent with the hypothesis that the gate-drain depletion region is widened, and a slight decrease in R S indicates an increase of I DS in the saturation region resulting from the effect of threshold voltage shift, which will be discussed later.…”