Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's

Lee, K.W.; Lee, Kwyro; Shur, M. S.; Vu, T.T.; Roberts, P.C.T.; Helix, M.J.

doi:10.1109/t-ed.1985.22058

Cited by 69 publications

(15 citation statements)

References 6 publications

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“…Table I shows that agreement is quite satisfactory. The same device was also DC tested at a Low current (I < 5 mA) using t-he "end" resistance measurement technique [4]. The result?…”

Section: Resultsmentioning

confidence: 99%

“…2 R= and VT = -is the thermal potential at temperature T (at room temperature VT = 25.6 mV), n is the ideality factor, I9 is the gate current and Rch is the channel resistance. cO and a are current dependent constants which according to the paper [4] are given by ' = (2 + 0.3478i + 7.72 * 10-3i2) 1 ac = (3 + 0.636i + 1.75 * 10-2i 2Y1…”

Section: Forward -Bias Measurementsmentioning

confidence: 99%

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Determination of the MESFET Resistive Parameters using Rf-Wafer Probing

Vogel

1987

17th European Microwave Conference, 1987

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A simple method has been proposed to measure the resistive parameters of MESFET's. An equivalent circuit of the forward biased FET valid in a low frequency Limit which allows to determine the gate, source and drain parasitic resistances from the measured parameters was developed. The ideality factor of the gate diode and the channel resistance can also be simply determined. The method does not require separate DC characterisation and can be applied in conjunction with the small-signal microwave S-matrix measurements.

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“…Table I shows that agreement is quite satisfactory. The same device was also DC tested at a Low current (I < 5 mA) using t-he "end" resistance measurement technique [4]. The result?…”

Section: Resultsmentioning

confidence: 99%

Section: Forward -Bias Measurementsmentioning

confidence: 99%

Determination of the MESFET Resistive Parameters using Rf-Wafer Probing

Vogel

1987

17th European Microwave Conference, 1987

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“…The extracted parasitic resistances are summarized in Table 1 for the MESFET A and B, respectively. These values are slightly smaller than the long channel value of 1/3 [2] and show slightly the shortchannel effect [6]. Even after deembedding the pad capacitances and selecting valid frequency range considering calibration error, the accuracy of rg measured in the pinched-FET condition is not suficient enough compared to the other parasitic resistances in the cold-FET case.…”

mentioning

confidence: 87%

“…While the condition of a2, = a12 = 0.5 has been proven for DC measurement techniques such as the endresistance measurement [2], it has been used without proof for AC measurement techniques such as the cold-FET technique [5], [6]. The condition, however, also holds for AC The gate resistance rg can be obtained from the pinched-FET condition as [3] ( 5 )…”

Section: Extraction Theorymentioning

confidence: 99%

Determination of Bias-Dependent Source Resistances in GaAs MESFETs under Cold-FET Condition

Kim

Yoon

Kim

et al. 1997

49th ARFTG Conference Digest

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A new method to determine biasdependent source resistances for GaAs MESFETs is introduced. The method is a combination of the cold-and pinched-FET measurement techniques based on the real parts of the two-port impedances and their derivatives. The proposed method offers a unique extraction procedure only assuming that the channel doping profile is symmetric. The deleterious problems of negative source resistances in the pinched-FET condition and the deviation of a 2 1 and a12 from 0.5 in the cold-FET condition are solved by deembedding the on-wafer pad parasitics. The usefulness of the method has been demonstrated by extracting source resistances for two types of MESFETs. The results were self-consistent enough to confirm the validity of this method.

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“…The gate-drain breakdown walkout is believed to be caused by the creation and filling of electron traps between the gate and the drain, leading to widening of the depletion region and reducing the electric field [12,13]. End resistance measurements [14] indicate that the drain-to-channel resistance, R D , will increase by approximately 12% after hot-electron stresses, while on the source side only a slight decrease in R S , 0.2%, is observed. The increase in R D is consistent with the hypothesis that the gate-drain depletion region is widened, and a slight decrease in R S indicates an increase of I DS in the saturation region resulting from the effect of threshold voltage shift, which will be discussed later.…”

Section: Gate-drain Breakdown Walkoutmentioning

confidence: 99%