Abstract:A new method to determine biasdependent source resistances for GaAs MESFETs is introduced. The method is a combination of the cold-and pinched-FET measurement techniques based on the real parts of the two-port impedances and their derivatives. The proposed method offers a unique extraction procedure only assuming that the channel doping profile is symmetric. The deleterious problems of negative source resistances in the pinched-FET condition and the deviation of a 2 1 and a12 from 0.5 in the cold-FET condition… Show more
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