A new technique to determine the average low-field electron mobility in MESFET using C-V measurement

Moon, B.-J.; Helix, M.J.; Lee, S.

doi:10.1109/16.155868

Cited by 10 publications

(6 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This mobility value is found to be much lower than the value measured in the accumulation mode (700 cm 2 /Vs). This is not surprising since the low field mobility in the depletion mode is reported to increase rapidly for gate voltages above V T in MESFET devices [12]. This should be explained by the decreasing of the depletion layer while increasing V GS above V T .…”

Section: Mobility Voltage Dependencementioning

confidence: 76%

“…the channel conductance does not longer depend on V DS but on V GS . So, according to (12) and 4, the conductance can be simply related to the closure of the channel by the depletion region entirely controlled by V GS as following:…”

Section: Derivation Of the Analytic Model For The Depletion Modementioning

confidence: 99%

“…At the saturation point, for a given V GS , the drain current reaches its maximum value, so that the saturation voltage V DS,sat is obtained by zeroing the channel conductance g d , in (12), yielding:…”

Section: Derivation Of the Analytic Model For The Depletion Modementioning

confidence: 99%

See 2 more Smart Citations

Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology

Abraham

Chelly

Elbaz

et al. 2012

Active and Passive Electronic Components

View full text Add to dashboard Cite

An analytical model of the silicon on insulator photoactivated modulator (SOI-PAM) device is presented in order to describe the concept of this novel device in which the information is electronic while the modulation command is optical. The model, relying on the classic Shockley’s analysis, is simple and useful for analyzing and synthesizing the voltage-current relations of the device at low drain voltage. Analytical expressions were derived for the output current as function of the input drain and gate voltages with a parameterization of the physical values such as the doping concentrations, channel and oxide thicknesses, and the optical control energy. A prototype SOI-PAM device having an area of 4 μm × 3 μm with known parameters is used to experimentally validate and support the model. Finally, the model allows the understanding of the physical mechanisms inside the device for both dark and under illumination conditions, and it will be used to optimize and to find the performance limits of the device.

show abstract

Section: Mobility Voltage Dependencementioning

confidence: 76%

Section: Derivation Of the Analytic Model For The Depletion Modementioning

confidence: 99%

See 1 more Smart Citation

Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology

Abraham

Chelly

Elbaz

et al. 2012

Active and Passive Electronic Components

View full text Add to dashboard Cite

show abstract

“…21 This effect has been explained in terms of the interaction between the carriers and the shallow channel implantation, related to the high degree of compensation by the p-buffer layer implantation in the channel region in devices using a buried p-type buffer. In our model, we use the following linear relationship:…”

Section: Mobilitymentioning

confidence: 99%

“…(9)) 1/Mn0 ~ 1/Mimp + I/Mi •ps • (21) Here, /j, 0 , /ii, ^2, T^, XTMO, XTMl, and XTM2 are model parameters. The quality of this model is illustrated in Fig.…”

Section: Temperature Dependenciesmentioning

confidence: 99%

Spice Modeling of Compound Semiconductor Devices

Iñı́guez

Fjeldly

Shur

et al. 1998

Int. J. Hi. Spe. Ele. Syst.

View full text Add to dashboard Cite

We review recent advances in the modeling of novel and advanced semiconductor devices, including state-of-the-art MESFET and HFETs, heterodimensional FETs, resonant tunneling devices, and wide-bandgap semiconductor transistors. We emphasize analytical, physics-based modeling incorporating the important effects present in modern day devices, including deep sub-micrometer devices. Such an approach is needed in order to accurately describe and predict both stationary and dynamic device behavior and to make the models suitable for implementation in advanced computer aided design tool including circuit simulators such as SPICE.Hence, a strong impetus exists for discussing these crucial aspects of advanced device modeling for circuit simulators and other computer aided design (CAD) tools. A better understanding of these issues may help speed the transfer of knowledge on new processes and devices and allow the circuit design houses access to the latest in device technology with minimal delay.The FET models considered here are mostly based on the unified modeling concept, where continuous analytical expressions for current voltage (I-V) and capacitance voltage (C-V) characteristics are used for all bias conditions, with no discontinuities in derivatives to any order. 1 ' 2 A brief review of this modeling strategy is presented in Sec. 2.Proven device concepts such as metal-semiconductor FETs (MESFETs) and heterostructure FETs (HFETs) are solidly entrenched in the high-speed/highfrequency electronics market, and in high-power/high-temperature applications. The race for improved performance is evident in the compound semiconductor device technology, with a drive towards reduced dimensions, new material combinations, and improved and novel device structures. In Sec. 3, we consider recent progress in the modeling of GaAs based MESFETs and HFETs that includes improved descriptions of transistor characteristics, thermal effects, gate leakage, and device capacitances. [3][4][5][6] Device scientists and engineers worldwide are engaged in developing novel device technologies intended to meet the even more stringent demands of the future, including those posed by new and special applications. As an example, we consider in Sec. 4 the modeling of heterodimensional devices, including two-dimensional (2D) MESFETs and 2D resonant tunneling diodes and transistors, which utilize electronic systems of different dimensionality. These devices demonstrate remarkable properties in terms of short-channel effects, intrinsic capacitances, power dissipation and versatility in logic circuits. As another example, we consider in Sec. 5 devices fabricated from wide-bandgap semiconductors such as SiC and GaN. These devices, which presently attract a great deal of attention, have unique properties needed for high-power/high-frequency/high-temperature applications.Many of the device models discussed here have been implemented in the circuit simulator AIM-Spice, 7 which runs on PCs and on other workstation platforms supporting the WindowsNT operating syst...

show abstract