In this paper we p resent an empirical preliminary model able to simulate the degradation with t ime in the gate leakage current in GaN HEMT devices. The model is based on extensive reverse and forward current measurements, carried out on a wide range of different device designs and under different bias, performed over aged transistors by III-V Lab (Alcatel-Thales) within the European KORRIGA N. A closed form expression for the reverse gate current, depending on time, as well as the expression parameters extraction procedure are presented. The experimental and simulated results presented illustrate the validity of the model as well as it's usefulness in reliability studies.

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Abstract-A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power (GaAs) and high power (GaN) devices with equal success. The model provides accurate simulation of the static (DC) and dynamic (Pulsed) I-V characteristics of the device over a wide bias and ambient temperature range (from −70 • C to +70 • C) without the need of an additional electro-thermal sub-circuit. This is an important issue in high power GaN HEMT devices where self-heating and current collapse due to traps is a more serious problem. The parameter extraction strategy of the new model is simple to implement. The robustness of the model when performing harmonic balance simulation makes it suitable for RF and microwave designers. Experimental results presented demonstrate the accuracy of the model when simulating both the small-signal and largesignal behavior of the device over a wide range of frequency, bias and ambient temperature operating points. The model described has been implemented in the Advanced Design System (ADS) simulator to validate the proposed approach without convergence problems.

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