Abstract-This paper presents a wideband model, from Direct Current (DC) to W band, for a single Anode Schottky Diode based on a commercial VDI chip. Different measurements have been performed to obtain a complete large-signal equivalent circuit model suitable for the device under consideration up to 110 GHz, and for its integration in planar circuits. The modeling has been done using a combination of DC measurements, capacitance measurements, and RF scattering measurements. The test structure for on-wafer Sparameter characterization has been developed to obtain an equivalent circuit for Coplanar to Microstrip (CPW-Microstrip) transitions, then verified with 3D Electromagnetic (EM) tools and finally used to deembed device measurements from empirical data results in W band. 3D EM simulation of the diodes was used to initialize the parasitic parameters. Those significant extrinsic elements were combined with the intrinsic elements. The results show that the proposed method is suitable to determine parameters of the diode model with an excellent fit with measurements. Using this model, the simulated performance for a number of diode structures has given accurate predictions up to 110 GHz. Some anomalous phenomena such as parasitic resistance dependence on frequency have been found.
In this paper we p resent an empirical preliminary model able to simulate the degradation with t ime in the gate leakage current in GaN HEMT devices. The model is based on extensive reverse and forward current measurements, carried out on a wide range of different device designs and under different bias, performed over aged transistors by III-V Lab (Alcatel-Thales) within the European KORRIGA N. A closed form expression for the reverse gate current, depending on time, as well as the expression parameters extraction procedure are presented. The experimental and simulated results presented illustrate the validity of the model as well as it's usefulness in reliability studies.
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