An analytical model of the silicon on insulator photoactivated modulator (SOI-PAM) device is presented in order to describe the concept of this novel device in which the information is electronic while the modulation command is optical. The model, relying on the classic Shockley’s analysis, is simple and useful for analyzing and synthesizing the voltage-current relations of the device at low drain voltage. Analytical expressions were derived for the output current as function of the input drain and gate voltages with a parameterization of the physical values such as the doping concentrations, channel and oxide thicknesses, and the optical control energy. A prototype SOI-PAM device having an area of 4 μm × 3 μm with known parameters is used to experimentally validate and support the model. Finally, the model allows the understanding of the physical mechanisms inside the device for both dark and under illumination conditions, and it will be used to optimize and to find the performance limits of the device.
The hybrid optically and electrically controllable field effect transistor is a novel device whose current-voltage (I-V) curve can be controlled by optical or electrical modulation of metallic nanoparticles. The basic structure of this transistor is similar to that of a junction gate field effect transistor, where the conventional gate contact is replaced by an array of nanoparticles located on the upper side of the p-n junction and parallel to the channel direction, whereas the source and the drain contacts remain the same. The deposition of the nanoparticles is achieved by self-assembly using the focused-ion-beam technology. The displacement of the nanoparticles along the air gap is performed either optically or electrically. Optical control is based on a special type of optical tweezers realized by guiding and confining light into a nanosize void structure in which the nanoparticle is placed. Electrical control via an external electric field tunes the nanoparticles. Control of the I-V curve controls the logic function of the device. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).
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