Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology

Abstract

An analytical model of the silicon on insulator photoactivated modulator (SOI-PAM) device is presented in order to describe the concept of this novel device in which the information is electronic while the modulation command is optical. The model, relying on the classic Shockley’s analysis, is simple and useful for analyzing and synthesizing the voltage-current relations of the device at low drain voltage. Analytical expressions were derived for the output current as function of the input drain and gate voltages with a parameterization of the physical values such as the doping concentrations, channel and oxide thicknesses, and the optical control energy. A prototype SOI-PAM device having an area of 4 μm × 3 μm with known parameters is used to experimentally validate and support the model. Finally, the model allows the understanding of the physical mechanisms inside the device for both dark and under illumination conditions, and it will be used to optimize and to find the performance limits of the device.

Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

“…Nanoscale silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) based devices are the building blocks of up-to-date systems allowing ultrafast data processing. This is in accordance with efforts to develop new generation of ultra-fast computers based on combined electronic and signal processing on one hand [1] and advanced generations of nanoscale devices (NSB) for communication systems [2,3] on the other hand. In this paper, we report the influence of the silicon channel thickness on the electrical characteristics of SOI MOSFET NSB, and we present an accurate model permitting to evaluate the series resistance and the saturation current as a function of the thickness or of the gate voltage, when part of the aim is to explain the anomalous transport behavior of the thinner channels having a channel's thickness as low as 1.6 nm and obtained by a selective gate-recessed process [4].…”