Electrical profiling and optical activation studies of Be-implanted GaAs

Abstract

Differential resistivity and Hall-effect measurements have been utilized to study the annealing behavior and electrical carrier-distribution profiles of Be-implanted GaAs. A maximum of 90–100% electrical activation occurs during 900 °C anneals for implanted Be concentrations less than ∼5×1018 cm−3. For higher fluences, however, a heavily concentration-dependent diffusion is observed, and the measured electrical activation is complicated by outdiffusion of Be into the Si3N4 encapsulant. In these cases, a maximum in the electrical activation appears for annealing near 700 °C. Low-temperature (5 °K) photoluminescence substantiates previous findings that 900 °C annealing results in maximum optical activation and lattice recovery.

SIMS Studies of 9Be Implants in Semi‐Insulating InP

“…In the last several years a number of publications by Davies There exists a need for controllable acceptor doping of InP in several of the applications mentioned above. Beryllium has already proven to be a useful implanted acceptor with good electrical activation in GaAs and GaAso.6P0.4 (20)(21)(22)(23). Low dark current avalanche photodiodes can be constructed from structures incorporating an InP p-n junction above a detecting InGaAsP layer (15).…”

“…Low dark current avalanche photodiodes can be constructed from structures incorporating an InP p-n junction above a detecting InGaAsP layer (15). It is found that the behavior of implanted 9Be in semi-insulating InP differs significantly from its behavior in GaAs (23). To date Zn and Cd have been the dominant impurities used to obtain p-type InP by growth or diffusion techniques.…”

“…heavier p-type ionS. Beryllium has already proven to be a useful implanted acceptor with good electrical activation in GaAs and GaAso.6P0.4 (20)(21)(22)(23). More recently, 9Be implantation has been successfully employed to fabricate diodes in InP and in InGaAsP (24)(25)(26)(27),…”

“…For these reasons we have studied the atomic profiles of 9Be that result from implantation and annealing in semi-insulating InP. It is found that the behavior of implanted 9Be in semi-insulating InP differs significantly from its behavior in GaAs (23). We have observed that under typical annealing temperatures for implanted InP ( T ~ 700~ 9Be is a rapid diffusant even for fluences as low as 1 • 10 TM cm -2.…”

Photoluminescence of Be implanted Si-doped GaAs

“…The (e-A°) peak was found to increase with the Be dose (up to 5 × 10 13 cm -2 ) as well as the anneal temperature (600-900°C). McLevige et al 7 confirmed these results and reported that the (e-A°) peak intensity also increased with the annealing time, saturation occurring after 1 h. Comas et al 8 Degenerately doped n-type GaAs produces band-to-band luminescence with the peak energy dependent on the carrier concentration. In this study the photoluminescence of Si-doped GaAs is examined after implantation with high energy Be ions and annealing.…”