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In this context, a simple, nontoxic, and eco‐friendly fully water‐induced (WI) route to fabricate ternary ZrGdOx thin films at various annealing temperatures is reported. Annealing temperature dependent microstructure, morphology, optical, electrical properties, and chemical bonding states of the WI ZrGdOx thin films are investigated by x‐ray diffraction, atomic force microscopy, optical spectroscopy, x‐ray photoelectron spectroscopy, and electrical measurements. A low leakage current density of 10−8 A cm−2 at 1 mV cm−1 and a large areal capacitance of 531 nF cm−2 at 20 Hz are observed for 400 °C‐annealed ZrGdOx thin films. To verify the possible applications of ZrGdOx thin films as the gate dielectric in thin‐film transistors (TFTs), WI In2O3/ZrGdOx TFTs are integrated. 250 °C‐derived full oxide In2O3/ZrGdOx TFTs have demonstrated high electrical performance and low operating voltage, including high µFE of 18.82 cm2 V−1 S−1, threshold voltage shift of 0.46 V under positive bias stress for 3600 s, and a large Ion/Ioff of 6.01 × 107, respectively. Finally, a low voltage resistor‐loaded unipolar inverter is built using In2O3/ZrGdOx TFT, exhibiting a linear relationship between supplied voltage and gain voltage and a maximum gain of 7.4 at 2.5 V. These optimized parameters have achieved a low operating voltage of 2 V, which represents a great step toward the achievement of low‐cost, low‐power consumption, and large‐area all‐oxide flexible electronics.

Films of nitrogen-doped TiO2 have been successfully deposited on a Si substrate by radio frequency reactive sputtering in a mixture of argon, oxygen and nitrogen. The nitrogen gas ratio varies in the range 0.2–0.4 during the deposition, resulting in TiOxNy films with 3% ≤ y ≤ 6.55% as determined by x-ray photoelectron spectroscopy (XPS). Chemical bond state analysis by XPS indicates that nitrogen is effectively incorporated and produces an oxynitride centre as oxygen is replaced by nitrogen. Characterization by atomic force microscopy demonstrates that the incorporation of nitrogen has a significant effect on the morphology of the targeted TiO2 thin films. Spectroscopic ellipsometry with a photon energy of 0.75–6.5 eV at room temperature has been carried out to derive the refractive index n and the extinction coefficient k on the basis of a new amorphous dispersive model. The optical constants such as absorption coefficient, complex dielectric functions and the optical band gap have been determined. The trend of a decrease in the optical band gap with an increase in nitrogen concentration is consistent with the observation determined by UV–visible spectroscopy. The reduced band gap is associated with the N 2p orbital in the TiOxNy films.

N-doped ZnO films were prepared by annealing zinc oxynitride films deposited by rf reactive sputtering. Two Raman peaks were observed at 274 and 580 cm −1. According to the variation of the integral intensity of these two peaks, the nitrogen activation at 500°C ͓the activation temperature ͑AT͔͒ has been obtained. Below the AT, the integral intensities of them show a different variation trend. X-ray photoelectron spectroscopy ͑XPS͒ indicates the N chemical state variation for them and finds the activated Zn-N bond. Further analyses by photoluminescence ͑PL͒ spectra and spectroscopic ellipsometry ͑SE͒ have been carried out. The activated sample exhibits a symmetric emission peak at 3.22 eV assigned to be the A 0 X emission at room temperature. SE investigation takes account of samples within the different temperature span divided by the AT. Different factors, such as nitrogen dopant ͑N͒ O and the nanocrystal growth, which affect the redshift of the absorption edges, have been discussed.

[structure: see text]. A highly convergent protocol to cyclopeptide alkaloids, as demonstrated by the first total synthesis of antiplasmodial agent ziziphine N, is developed. The key elements include construction of its aryl ether unit via Mitsunobu reaction, installation of its enamide part via CuI/N,N-dimethylglycine-catalyzed coupling reaction, and ring closure with coupling agents such as FDDP and DPPA.