Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (100)

He, Gang; Liu, M.; Zhu, Li; Chang, Ming Xian; Fang, Q.; Zhang, L.D.

doi:10.1016/j.susc.2004.11.042

Cited by 203 publications

(95 citation statements)

References 29 publications

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“…Initially, a thin Hf buffer layer was deposited on chemically cleaned Si substrate in order to be able to avoid the formation of any undesired interfacial suboxide layer [8,17,22]. Thickness of Hf buffer layer grown for 60 s with 30 W sputtering power was measured 5 nm by a profilometer.…”

Section: Methodsmentioning

confidence: 99%

“…A number of compatible methods have been developed to fabricate high-materials such as thermal oxidation [8], a variety of chemical vapor deposition techniques [9], ion beam deposition [10], atomic layer deposition [11,12], pulsed laser deposition [13], laser oxidation [14,15], remote plasma oxidation [16], dc and rf sputtering [8,17,18]. Among them, magnetron sputtering technique has attracted special attention due to its high growth rate, good control over physical properties of grown film and ability to grow in amorphous phase.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Cantaş¹,

Aygün²,

Turan³

2014

Applied Surface Science

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a b s t r a c tHigh-hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and highfilm, prior to HfO 2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O 2 /Ar gas mixture was studied for the optical and structural properties of grown HfO 2 high-thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO 2 dielectric film, while increments in SiO 2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O 2 /Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Cantaş¹,

Aygün²,

Turan³

2014

Applied Surface Science

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“…Its intensity increases very tiny for 150°C, while it is recognizable enough at 200°C substrate temperature grown film. This peak observed around 28°of 2θ attributed to (111) monoclinic phase of HfO 2 [17,[20][21][22][23]. Nevertheless, having a low peak intensity and high FWHM value, it can be inferred that the microcrystalline structure has just been started to be formed.…”

Section: Xrd Structural Propertiesmentioning

confidence: 97%

Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films

et al. 2011

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HfO 2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O 2 /Ar ratio, substrate temperature, sputtering power on the structural properties of HfO 2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO x suboxide layer at the HfO 2 /Si interface is unavoidable. The HfO 2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O 2 /Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO 2 , which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO 2 to form HfO 2 , leaving Si-Si bonds behind.

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“…In general, the thickness of the Hf02 decreases if the annealing process is applied [6,10]. Thicker films (as-deposited) decreased more after anneal.…”

Section: Gixrr For Thickness Characterizationsmentioning

confidence: 98%

Post-Deposition Annealing Analysis for HfO[sub 2] Thin Films Using GIXRR∕GIXRD

Fu¹,

Chang²,

Chen³

2009

AIP Conference Proceedings

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Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (100)

Cited by 203 publications

References 29 publications

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films

Post-Deposition Annealing Analysis for HfO[sub 2] Thin Films Using GIXRR∕GIXRD

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