Post-Deposition Annealing Analysis for HfO[sub 2] Thin Films Using GIXRR∕GIXRD

Fu, Wei‐En; Chang, Y.Y.; Chen, Yi‐Ching

doi:10.1063/1.3251205

Cited by 4 publications

(3 citation statements)

References 7 publications

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“…By the Scherrer formula, the crystallite size of HfO2 thin film of S2 and S3 with different incident angles can be calculated using the m(−111) peak of the monoclinic phase [47][48][49].…”

Section: Grazing Incidence X-ray Diffraction (Gixrd)mentioning

confidence: 99%

“…where D is the crystallite size, λ is the X-ray wavelength of Cu Kα (0.15418 nm), k is the Scherrer constant of the order of unity (0.95 for powder and 0.89 for film), β is the full width of peak at half maximum intensity (FWHM), and θ is the corresponding Bragg diffraction angle [47][48][49]. Figure 7 exhibits the m(−111) peak patterns of monoclinic phase of S2 and S3 with incident angles of 0.5°, 1°, 3° and 5°, from Figure 6b,c, respectively.…”

Section: Grazing Incidence X-ray Diffraction (Gixrd)mentioning

confidence: 99%

“…Generally, the crystal lattice with dwindling crystal size tends to generate phases of higher symmetry [50,51]. These correspond to the appearance of tetragonal and By the Scherrer formula, the crystallite size of HfO 2 thin film of S2 and S3 with different incident angles can be calculated using the m(−111) peak of the monoclinic phase [47][48][49].…”

Section: Grazing Incidence X-ray Diffraction (Gixrd)mentioning

confidence: 99%

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Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Luo

Yang

et al. 2018

Crystals

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Hafnium oxide (HfO 2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited HfO 2 film has been studied using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD) and variable angle spectroscopic ellipsometry (VASE). The XPS measurements and analyses revealed the insufficient chemical reaction at the lower oxygen flow rate and the film quality improved at higher oxygen flow rate. Via GIXRD, it was found that the HfO 2 films on Si were amorphous in nature, as deposited at lower deposition temperature, while being polycrystalline at higher deposition temperature. The structural phase changes from interface to surface were demonstrated. The values of optical constants and bandgaps and their variations with the growth conditions were determined accurately from VASE and XPS. All analyses indicate that appropriate substrate temperature and oxygen flow are essential to achieve high quality of the AVD-grown HfO 2 films.

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Section: Grazing Incidence X-ray Diffraction (Gixrd)mentioning

confidence: 99%

Section: Grazing Incidence X-ray Diffraction (Gixrd)mentioning

confidence: 99%