In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical properties of MOS capacitors based on sputtering-derived HfTiO as gate dielectric on InGaAs substrate. Significant suppression of formation of Ga-O and As-O bond from InGaAs surface after deposition of ALD Al2O3 with growth cycles of 20 has been achieved. X-ray photoelectron spectroscopy (XPS) measurements have confirmed that suppressing the formation of interfacial layer at HfTiO/InGaAs interface can be achieved by introducing the Al2O3 interface passivation layer. Meanwhile, increased conduction band offset and reduced valence band offset have been observed for HfTiO/Al2O3/InGaAs gate stack. Electrical measurements of MOS capacitor with HfTiO/Al2O3/InGaAs gate stacks with dielectric thickness of ∼4 nm indicate improved electrical performance. A low interface-state density of (∼1.9) × 10(12) eV(-1) cm(-2) with low frequency dispersion ( ∼ 3.52%), small border trap density of 2.6 × 10(12) cm(-2), and low leakage current of 1.17 × 10(-5) A/cm(2) at applied gate voltage of 1 V have been obtained. The involved leakage current conduction mechanisms for metal-oxide-semiconductor (MOS) capacitor devices with and without Al2O3 interface control layer also have been discussed in detail.

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Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric function, band alignment, and electrical properties of sputtering-derived HfTiO high-kgate dielectrics on GaAs substrates have been studied by angle resolved X-ray photoemission spectroscopy (ARXPS), spectroscopy ellipsometry (SE), and electrical measurements.