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Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and drain (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal–oxide–semiconductor field-effect transistor (nMOSFETs). In this research, molecular carbon (C) ion implantation and recrystallization schemes employed to achieve strained Si:C films with a high substitutionally incorporated carbon concentration ([C]sub) and a high ratio of substitution were studied. Several recrystallization techniques including rapid-thermal-annealing (RTA)-based solid phase epitaxy (SPE), spike annealing, and nonmelt laser annealing have been used to optimize C incorporation into Si and strain application. Results of these different implantation and annealing techniques are compared and discussed. Furthermore, we proposed the first recrystallization by nonmelt laser annealing and the co-incorporation of a dopant that increases the rate of Si regrowth and has a covalent radius slightly different from that of Si. These processes markedly promoted the recrystallization of C densely incorporated in an amorphous Si layer and improved the crystallinity of strained Si:C films while maintaining a high [C]sub at a high ratio of substitution.

High performance 14 nm gate length CMOSFETs are demonstrated in this paper. To acquire shallow sourcddrain ( S D ) extension profile, the optimization of low thermal budget process utilizing poly-SiGe and Ni salicide is performed. A poly-SiGe gate electrode minimizes gate depletion effect, therefore high level of dopant activation in the gate electrode is realized even by low temperature spike annealing. Moreover, short channel characteristics are optimized by using offset spacer beside the gate electrode. The highest drive current is achieved in 14 nm gate length CMOSFETs reported to date.