A methodology of including MOSFET characteristics fluctuation into BSIM3v3 SPICE model is proposed. Fundamentally physical parameters such as gate oxide thickness fl0Q channel concentration (NCH), gate length (L), parasitic resistance (RDSW)are chosen as an independent parameter set. Parameters which should be expressed by the above set are described in simple physical equations. This method allows not only statistical simulation based on electric test data that can be easily measured nlth full-auto tester system, but also characteristics prediction of modified device structure or of future technoIogy devices.
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