Mobility improvement for 45nm node by combination of optimized stress control and channel orientation design

Atomistic magnetoconductance effects in strained FETs

“…From a classical Hall effect approach, this is a pretty small angular deflection to cause such a noticeable Ms-B behavior. Theoretical, modeling and simulation research work in progress at ]NAOE [8], shows that the 45° rotation of the channel axis with respect to the wafer notch, and the use of strain engineering [9] results in a channel in-plane non-homogeneous strain (see Fig. 2) [10].…”

Blanket SMT With In Situ N2 Plasma Treatment on the $\langle \hbox{100} \rangle$ Wafer for the Low-Cost Low-Power Technology Application

“…However, it requires an extra mask to selectively remove the SMT tensile layer on the PMOS region since the tensilestress liner degrades the hole mobility in PMOS. In low-power technology, the 45d rotated wafer ( 100 orientation on the (100) substrate) has been chosen considering both performance and cost for the following reasons: 1) Intrinsic hole mobility is higher compared to that of a normal wafer, and 2) hole mobility is insensitive to stress, hence the tensile-stress liner can be directly applied on the whole wafer to improve NMOS perfor- mance without degrading PMOS performance, thus reducing the cost [2], [3]. The blanket-SMT process is expected to be implemented on the 45d rotated wafer without degrading PMOS performance.…”

Comparison between <100> and <110> oriented channels in highly strained FDSOI nMOSFETs

“…MOSFETs performance depends also on the substrate orientation. It was already demonstrated that 45°-rotated substrates can improve pMOS device performance without degrading the nMOS one [6]. However, the best channel orientation depends on the stress techniques and levels.…”