Atomistic magnetoconductance effects in strained FETs

Gutierrez-D, Edmundo A.; Vega-G, V. H.; Rodriguez-R, G.; Uribe-V, H.; Huerta-G, O V; Molina-R, J.

doi:10.1109/sbmicro.2013.6676181

Cited by 2 publications

(2 citation statements)

References 9 publications

(5 reference statements)

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“…Experiments in some case studies have shown that magnetic fields cause a current deflection in the drain current voltage, which alters the conductivity of the active region resulting in asymmetric magnetic tunneling and non-uniform spatial conduction in MOSFETs [11], [12]. Wick made the first measurement of the Hall-effect of silicon on a fairly impure sample [13].…”

Section: Introductionmentioning

confidence: 99%

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Hasan¹,

Mutlaq²,

Ali³

et al. 2023

IJECE

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In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (ION), subthreshold leakage current (IOF), threshold voltage (VTh), and the Hall voltage (VH) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage VTh and (ION/IOF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively.

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Section: Introductionmentioning

confidence: 99%

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Hasan¹,

Mutlaq²,

Ali³

et al. 2023

IJECE

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show abstract

“…This leads to complicated various short channel effects (SCE) such as the effect of hot carriers effect, threshold voltage Indonesian J Elec Eng & Comp Sci ISSN: 2502-4752  roll-off, substrate carrier effect, higher change in hall voltage and drain-source resistance (RDS) in the linear region [8], [13], [15], [16]. Experimental of several case studies indicate that the magnetic field induced current deflection on the drain-current voltage and changing the conductivity of the active region [17], induces asymmetrical magneto tunneling conductance in MOSFETs resulting of non-homogeneous space mechanical strain [18], [19]. The magneto-transconductance of N-type metal-oxide-semiconductor (N-MOS) transistors exposed to the external magnetic field B=7T and 14T is reduced by 7% and 28% respectively due to the current reduction that comes from the deflection of the current lines inside the channel consequently of the Lorentz force acting to the current [14], [20].…”

Section: Introductionmentioning

confidence: 99%

Magnetic sensitivity modeling of dual gate MOS transistor

Kessi

Benfdila

2021

IJEECS

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In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. The magnetic field modulates the electrons position and density as well as the potential distribution in the case of silicon tunnel tunneling field-effects (FETs). This modulation impacts the device electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), threshold voltage (VT), magneto-transconductance (gmm) and output magneto-conductance (gmDS). In addition, a hall voltage (VH) is induced and modulated by the magnetic field. It has been observed that this voltage influences the effective applied gate voltage. It has been observed that the threshold voltage variations induced by the magnetic field is of paramount importance and affects the device switching properties both speed and power dissipation, noted that the threshold voltage VT and (Ion/Iof) ratio are reduced by 10-3V and 102 for a magnetic field of ±6 and ±5.5 Tesla, respectively. We have simulated the different behavior in the channel, mainly doping concentration, potential distribution, conduction and valence bands, total current density, total charge density, electric field, electron mobility, and electron velocity.

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Atomistic magnetoconductance effects in strained FETs

Cited by 2 publications

References 9 publications

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Magnetic sensitivity modeling of dual gate MOS transistor

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