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b-SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was b-SiC(001){111}//Si(001) {111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 lm/h, which is 5-200 times higher than that of conventional chemical vapor deposition methods. The density of twins increased with increasing b-SiC thickness. The cross section of the films exhibited a columnar structure, containing twins at {111} planes that were tilted 15.8°to the surface of substrate. The growth mechanism of the films was discussed. K E Y W O R D S chemical vapor deposition, silicon carbide

Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of <111 > -oriented bSiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (P tot ). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the P tot . The EBSD results indicated that the higher P tot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in b-SiC films.

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3C‐SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C‐SiC (111) polycrystalline films were prepared at deposition temperature (Tdep) of 1423‐1523 K, whereas the 3C‐SiC (111) epitaxial films were obtained at 1573‐1648 K with the thickness of 5.40 to 9.32 μm. The in‐plane relationship was 3C‐SiC [‐1‐12]//Si [001] and 3C‐SiC [‐110]//Si [‐110]. The deposition rates (Rdep) were 16.2‐28.0 μm/h, which are 2 to 100 times higher than that of 3C‐SiC (111) epi‐grown on Si (111) by conventional CVD. The growth mechanism of 3C‐SiC (111) epitaxial films has also been proposed.

111)-oriented b-SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si(CH 3 ) 3 -Si(CH 3 ) 3 , HMDS) without H 2 . The effects of laser power (P L ), total pressure (P tot ) and deposition temperature (T dep ) on the microstructure, carbon formation and deposition rate (R dep ) were investigated. b-SiC films with carbon formation and graphite films were prepared at P L ≥ 170 W and P to ≥ 1000 Pa, respectively. Carbon formation strongly inhibited the film growth. b-SiC films without carbon formation were obtained at P tot = 400-800 Pa and P L = 130-170 W. The maximum R dep was about 50 lmÁh À1 at P L = 170 W, P tot = 600 Pa and T dep = 1510 K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions. K E Y W O R D S chemical vapor deposition, films, silicon carbide Correspondence

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