b-SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was b-SiC(001){111}//Si(001) {111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 lm/h, which is 5-200 times higher than that of conventional chemical vapor deposition methods. The density of twins increased with increasing b-SiC thickness. The cross section of the films exhibited a columnar structure, containing twins at {111} planes that were tilted 15.8°to the surface of substrate. The growth mechanism of the films was discussed. K E Y W O R D S chemical vapor deposition, silicon carbide
Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of <111 > -oriented bSiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (P tot ). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the P tot . The EBSD results indicated that the higher P tot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in b-SiC films.
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