Structural study of β‐SiC(001) films on Si(001) by laser chemical vapor deposition

Abstract

b-SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was b-SiC(001){111}//Si(001) {111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 lm/h, which is 5-200 times higher than that of conventional chemical vapor deposition methods. The density of twins increased with increasing b-SiC thickness. The cross section of the films exhibited a columnar structure, containing twins at {111} planes that were tilted 15.8°to the surface of substrate. The growth mechanism of the films was discussed. K E Y W O R D S chemical vapor deposition, silicon carbide

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

“…The effect of laser irradiation would provide enough energy to enhance R dep during growth period. The high density of TB 1 was formed at high R dep , as shown in previous works . The higher twin density results in 3D growth mode, which perfectly matches AFM observation.…”

“…The high density of TB 1 was formed at high R dep , as shown in previous works. 21 The higher twin density results in 3D growth mode, 34 which perfectly matches AFM observation. During the growth of 3C-SiC(111), the laterally nucleation of 3C-SiC(111) coalesced with each other and continue to 2D grow mode at high power laser irradiation due to low surface energy and high density of SFs.…”

“…The total pressure ( P tot ) was fixed to 1000 Pa, the T dep was 1473‐1633 K and the deposition time was 5‐20 minutes. More details of the experiments and LCVD apparatus can be found in our previous works …”

“…More details of the experiments and LCVD apparatus can be found in our previous works. 20,21 The in-plane relationship was detected by X-ray pole figure (Rigaku Ultima III, 40 kV, 40 mA; Tokyo, Japan) with Cu-Ka (wavelength k = 0.15406 nm). The surface morphology and film thickness were observed by fieldemission scanning electron microscopy (FESEM: FEI Quanta-250, 20 kV, Houston, USA).…”

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

“…36 The mechanism of TB defect self-vanishment had been discussed in our previous study. 37,38 In present study, the TB 1 growth on (1-11) plane of epi-3C-SiC (110) propagated along the substrate surface until meet anti-TB 1 on (-111) plane, and then TB 1 couples vanish. The opportunity of TB 2 growth (<111>-3C-SiC growth) greatly decreased.…”