Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

Abstract

Previously, we found 3C-SiC films favor to grow in <111> orientation on Si (110) (https://doi.org/10.1111/jace.15260). However, epitaxial growth of thick <110>-3C-SiC is still a big challenge. In this study, thick 3C-SiC (110) epitaxial films were prepared on Si (110) substrate by laser chemical vapor deposition (LCVD) using hexamethyldisilane (HMDS) in H 2 atmosphere. The investigation of growth mechanism showed that the laser of LCVD played an important role during the depositions. Observation by high-resolution transmission electron microscopy (HRTEM) revealed that the interface of 3C-SiC (110)/Si (110) exhibited rough texture at atomic level. The atomic roughness on Si (110) surface could be a key factor for 3C-SiC (110) nucleation. The growth of thick 3C-SiC (110) epitaxial films could be very promising for new development in power electronics applications.

Laser CVD Growth of Uniquely <010>‐oriented β‐Ga2O3 Films on Quartz Substrate with Ultrafast Photoelectric Response

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Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

“…• Q. Xu 49 et al and Q. Sun et al 50 also applied laser CVD to grow 〈111〉-3C-SiC using HMDS as both Si and C source. The investigators reported that the morphology of the 〈111〉-oriented 3C-SiC films evolved from mosaic to whisker to cauliflower-like shapes as HMDS flow rate increased.…”

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