Cubic Silicon Carbide: Growth, Properties, and Electrochemical Applications

Yang, Nianjun; Jiang, Xin

doi:10.1002/9781119313649.ch1

Cited by 4 publications

(6 citation statements)

References 114 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…APCVD was a dominant technique for the growth of SiC films during the 1980s and early 1990s, mainly due to the accessibility of APCVD systems [ 27 , 28 ]. With the improvement of LPCVD reactors, the focus was shifted, because it has better control of the film growth in terms of gas phase nucleation and impurity levels.…”

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

“…Low pressures also reduce the rate of gas phase nucleation and resulting particulates [ 25 ]. Furthermore, a LPCVD reactor allows operating more varieties of precursors and reduces the incorporation of impurities in the as-deposited films [ 28 ]. The only differences are related to the process reactor that must withstand a high-pressure gradient and the insertion of a vacuum system at the exhaust point of the reactor [ 37 ].…”

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

“…In the literature, it is reported that both 3C-SiC epitaxial and polycrystalline films have been deposited by the APCVD technique. It is particularly advantageous for SiC epitaxy, as temperatures in the order of or greater than 1300 °C are normally required for the growth of single SiC crystals on silicon wafer [28]. In the ALD technology, there are several modifications of the reactor structure in order to enable its use in low-temperature processes, among which the use of plasma (plasma-enhanced atomic layer deposition, PEALD) stands out [21].…”

Section: Atmospheric Pressure Chemical Vapor Depositionmentioning

confidence: 99%

See 3 more Smart Citations

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

View full text Add to dashboard Cite

A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

show abstract

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Section: Atmospheric Pressure Chemical Vapor Depositionmentioning

confidence: 99%

See 2 more Smart Citations

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

View full text Add to dashboard Cite

show abstract

“…As a semiconductor, SiC exhibits a wide band gap (2.2 eV-3.2 eV), high breakdown field (>20 × 10 5 V cm −1 ), good thermal conductivity (5 W cm −1 K −1 -7 W cm −1 K −1 ), and high mobility (10 3 cm 2 /Vs). Among the various types of SiC, cubic SiC (3C-SiC) has a crystal structure of great interest for piezoresistive applications such as pressure sensors (Dao, et al, 2016), advanced bioelectronic devices (Saddow et al, 2014), electrochemical applications (Yang and Jiang, 2019), and photovoltaic applications (Rasheed, et al, 2020). SiC provides a variety of optical and electronic applications (Majidi, et al, 2018 andAbderrazak andHmida, 2011).…”

Section: Introductionmentioning

confidence: 99%

The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

Ahmed

Sabri

Abed

2021

ARO

View full text Add to dashboard Cite

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

show abstract

Reliability and Failure Investigation of SiC MOSFET Under Avalanche

Luo

Zhang

et al. 2022

2022 23rd International Conference on Electronic Packaging Technology (ICEPT)

View full text Add to dashboard Cite

Cubic Silicon Carbide: Growth, Properties, and Electrochemical Applications

Cited by 4 publications

References 114 publications

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

Reliability and Failure Investigation of SiC MOSFET Under Avalanche

Contact Info

Product

Resources

About