2019
DOI: 10.1016/j.jpowsour.2019.227308
|View full text |Cite
|
Sign up to set email alerts
|

Nanoforest of 3C–SiC/graphene by laser chemical vapor deposition with high electrochemical performance

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
9
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 16 publications
(9 citation statements)
references
References 40 publications
0
9
0
Order By: Relevance
“…Recently, Zhang's group successfully realized the growth of graphene/SiC heterostructure by LCVD with monocrystalline Si as substrate, and the schematic of reaction apparatus is shown in Figure a. [ 62 ] To deposit 3C‐SiC/graphene nanocomposite, the evaporative hexamethyldisilane (HMDS) as only source was carried into the deposition chamber with H 2 dilution gas and Ar carrier gas, then the graphene and 3C‐SiC films can achieve one‐step growth on monocrystalline Si substrate with the 1064 nm laser continuously illumination for 20 min. During LCVD process, partial Si atom of the pregenerated SiC will be etched by the synergetic effects of laser and H 2 , leaving C–C band bonded C atoms formed graphene epitaxially on the SiC.…”
Section: Laser‐assisted Synthesis Of Graphenementioning
confidence: 99%
See 1 more Smart Citation
“…Recently, Zhang's group successfully realized the growth of graphene/SiC heterostructure by LCVD with monocrystalline Si as substrate, and the schematic of reaction apparatus is shown in Figure a. [ 62 ] To deposit 3C‐SiC/graphene nanocomposite, the evaporative hexamethyldisilane (HMDS) as only source was carried into the deposition chamber with H 2 dilution gas and Ar carrier gas, then the graphene and 3C‐SiC films can achieve one‐step growth on monocrystalline Si substrate with the 1064 nm laser continuously illumination for 20 min. During LCVD process, partial Si atom of the pregenerated SiC will be etched by the synergetic effects of laser and H 2 , leaving C–C band bonded C atoms formed graphene epitaxially on the SiC.…”
Section: Laser‐assisted Synthesis Of Graphenementioning
confidence: 99%
“…Reproduced with permission. [ 62 ] Copyright 2019, Elsevier. b) The schematic of the decomposition and deposition mechanism at P tot = 200 Pa and 800 Pa, respectively.…”
Section: Laser‐assisted Synthesis Of Graphenementioning
confidence: 99%
“…[146] Herein, microcrystalline, nanocrystalline, and epitaxial SiC films were systematically compared, in which the nanocrystalline structure presented highest double-layer capacitance and lowest redox reversibility because of the large diversity in crystal size, high amount of grain boundaries and amorphous phases; while the epitaxial structure displayed a sharp contrast due to its high purity and (001) orientation. Second, as tactics to enhance electronic conductivity, numerous unique carbon-based SiC electrodes have been reported, such as C-Ni-SiC composite, [147] graphene-wrapped SiC nanoparticles, [148] nanoforest-like SiC/ graphene film, [149] graphitic carbon-coated SiC nanowires, [150] and thin film SiC-derived graphene. [184] Noticeably, SiC/Si double layer was revealed to be a promising charge storage platform, in which the SiC thin film on Si wafer served as both a source and template to grow a high-surface-area porous graphene film via Ni-assisted process at high temperature.…”
Section: Overview Of Materials Design In Sic Electrodesmentioning
confidence: 99%
“…Graphene has been found nontoxic to neuronal cells, which makes it widely used in the biomedical field . Our previous study reported that the 3C-SiC/graphene film electrode prepared by laser chemical vapor deposition (LCVD) possesses high conductivity and large capacitance as a supercapacitor electrode compared with the pure 3C-SiC film . Therefore, the SiC/graphene composite film prepared by CVD may provide great opportunities in manufacturing implantable DA sensors with outstanding detection ability and biocompatibility.…”
Section: Introductionmentioning
confidence: 99%
“…16−18 Cubic SiC (3C-SiC) displays excellent biological compatibility, 19 good electrochemical performance, 20 and high adaptability with the Si-based semiconductor industry. 21 These characteristics make 3C-SiC a competitive material for implantable and miniaturized biomedical applications. Currently, Zhuang et al have reported an electrochemical DA sensor comprising a 3C-SiC film on a single-crystalline Si wafer.…”
Section: Introductionmentioning
confidence: 99%