Effect of Pressure on Microstructure of <111>‐Oriented β‐SiC Films: Research via Electron Backscatter Diffraction

Abstract

Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of <111 > -oriented bSiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (P tot ). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the P tot . The EBSD results indicated that the higher P tot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in b-SiC films.

Structural study of β‐SiC(001) films on Si(001) by laser chemical vapor deposition

“…At T dep =1623 K (Figure D), a few sixfold symmetry grains formed on the mosaic ground. The sixfold symmetry structure was the typical morphology of the <111>‐oriented grains because of APDs in the {111} planes …”

“…Laser chemical vapor deposition (LCVD) has been employed by our group to prepare many kinds of films with different structures . In this research, columnar β‐SiC<001> films with a high density of defects were prepared by LCVD without a carbonization step.…”

Controlled CVD growth of highly &lt;111&gt;-oriented 3C-SiC

“…It can also be noticed that the crystal size first increases when temperature rises from 1100 ℃ to 1200 ℃ and slightly decreases at 1250 ℃. The 6-fold symmetric pyramids was assumed to be formed by a pair of twin triangular pyramids joining each other 12 and is a typical morphology of coatings with <111>-oriented face-centered cubic (FCC) crystal structure 24 , whereas the pyramids with 4-fold symmetry was reported to be FCC crystals with <110> orientation 24 . The dense and dark striations seen in either the surface morphologies (Figure 1) or the cross-sections (Figure 2) of the samples prepared at T ≤ 1250 °C has previously been shown to be twins parallel to the (111) planes 13 , implying that these samples are highly <111>-oriented.…”

“…Highly <111>-oriented 3C-SiC has also been prepared with hexamethyldisilane via laser CVD [10][11][12][13][14] . However, due to the small laser spot size, the coating area was limited to less than 20 x 20 mm.…”

Structural study of epitaxial NdBa2Cu3O7−x films by laser chemical vapor deposition

“…Laser CVD is able to prepare lm at sufficiently high deposition rates with signicant orientation. [18][19][20][21] The laser beam not only has a simple heating effect, but also can induce decomposition of the metal organic precursors and decrease the activation energy of chemical reaction occurring on the substrate. 22,23 In this study, we prepared epitaxial NdBCO lms by laser CVD.…”