The effect of diluent gases on the growth of <i>β</i>-SiC films by laser CVD with HMDS

Zhu, Peipei; Tu, Rong; Zhang, S.; Han, Mingxu; Xu, Qifeng; Sun, Qiming; Zhang, L. M.; Goto, Takashi; Yan, Jiasheng; Li, S. S.

doi:10.1179/1432891715z.0000000002208

Cited by 9 publications

(5 citation statements)

References 29 publications

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“…Multicomponent precursors, e.g. methyltrichlorosilane [44][45][46][47][48][49][50][51][52][53][54] , hexamethyldisilane [55][56][57][58][59][60][61] , 1,3-disilabutane 62 , tetramethylsilane 63 , can function as a source for both Si and C atoms. On the other hand, single component precursors can only supply either Si or C atoms, and therefore a combination of Si-and Cprecursor is required.…”

Section: Cvd Growth Of Polycrystalline 3c-sicmentioning

confidence: 99%

Surface-Controlled Chemical Vapor Deposition of Silicon Carbide

Huang

2022

Linköping Studies in Science and Technology. Dissertations

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for the assistance in measurements and fruitful discussions in the weekly group meetings.Special thanks are given to Georgios Rizothanasis, Emilie Lindblad and Sarah McIntyre for all the Friday evenings we have spent in exploring restaurants in Linköping. In the end, I would like to wholeheartedly thank my parents, 黃坤德 and 林淑貞, and my sisters, 黃琳宴 and 黃伊婷 for their unconditional and endless support from Taiwan.

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Section: Cvd Growth Of Polycrystalline 3c-sicmentioning

confidence: 99%

Surface-Controlled Chemical Vapor Deposition of Silicon Carbide

Huang

2022

Linköping Studies in Science and Technology. Dissertations

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“…Multicomponent precursors, such as methyltrichlorosilane (MTS, CH3SiCl3) [1][2][3] and hexamethyldisilane (HMDS, Si2(CH3)6) [4][5][6] , contain both C-and Si-atoms. Singlecomponent precursors, on the other hand, contain only C or Si and, thus, two singlecomponent reactants are required for deposition of SiC.…”

Section: Introductionmentioning

confidence: 99%

Superconformal silicon carbide coatings via precursor pulsed chemical vapor deposition

Huang

Militzer

Wijayawardhana

et al. 2023

Preprint

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In this work, silicon carbide coatings (SiC) were successfully grown by pulsed chemical vapor deposition (CVD). The precursors silicon tetrachloride (SiCl4) and ethylene (C2H4) were not supplied in a continuous flow, but were pulsed alternately into the growth chamber with H2 as a carrier and a purge gas. A typical pulsed CVD cycle was SiCl4 pulse – H2 purge – C2H4 pulse – H2 purge. This led to the growth of superconformal SiC coatings, which could not be obtained under similar process conditions using a constant flow CVD process. We propose a two-step mechanism for the SiC growth via pulsed CVD. During the SiCl4 pulse, a layer of Si is deposited. In the following C2H4 pulse, this Si layer is carburized, and SiC is formed. The high chlorine surface coverage after the SiCl4 pulse is believed to enable the superconformal growth via a growth inhibition mechanism.

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“…Similarly, with C 3 H 8 as carbon precursor, the growth at T = 1200 °C, p tot = 4 kPa, was highly ⟨111⟩-oriented but switched to ⟨110⟩ at elevated temperatures. , No explanation for these changes in preferred growth orientation was suggested in these studies. Highly ⟨111⟩-oriented 3C-SiC has also been prepared with hexamethyldisilane via laser CVD. − However, because of the small laser spot size, the coating area was limited to less than 20 × 20 mm 2 .…”

Section: Introductionmentioning

confidence: 99%

Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

et al. 2022

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Highly ⟨111⟩-oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl 4 ) and toluene (C 7 H 8 ) at T ≤ 1250 °C and p tot = 10 kPa. In contrast, similar deposition conditions, with methane (CH 4 ) as the carbon precursor, resulted in randomly oriented 3C-SiC coatings with a cauliflower-like surface of SiC crystallites. No excess carbon was detected in the highly ⟨111⟩-oriented 3C-SiC samples despite the use of aromatic hydrocarbons. The difference in the preferred growth orientation of the 3C-SiC coatings deposited by using C 7 H 8 and CH 4 as the carbon precursors was explained via quantum chemical calculations of binding energies on various crystal planes. The adsorption energy of C 6 H 6 on the SiC (111) plane was 6 times higher than that on the (110) plane. On the other hand, CH 3 exhibited equally strong adsorption on both planes. This suggested that the highly ⟨111⟩-oriented 3C-SiC growth with C 7 H 8 as the carbon precursor, where both C 6 H 6 and CH 3 were considered the main active carbon-containing film forming species, was due to the highly preferred adsorption on the (111) plane, while the lower surface energy of the (110) plane controlled the growth orientation in the CH 4 process, in which only CH 3 contributed to the film deposition.

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The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS

Cited by 9 publications

References 29 publications

Surface-Controlled Chemical Vapor Deposition of Silicon Carbide

Surface-Controlled Chemical Vapor Deposition of Silicon Carbide

Superconformal silicon carbide coatings via precursor pulsed chemical vapor deposition

Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

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