High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition

Abstract

3C‐SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C‐SiC (111) polycrystalline films were prepared at deposition temperature (Tdep) of 1423‐1523 K, whereas the 3C‐SiC (111) epitaxial films were obtained at 1573‐1648 K with the thickness of 5.40 to 9.32 μm. The in‐plane relationship was 3C‐SiC [‐1‐12]//Si [001] and 3C‐SiC [‐110]//Si [‐110]. The deposition rates (Rdep) were 16.2‐28.0 μm/h, which are 2 to 100 times higher than that of 3C‐SiC (111) epi‐grown on Si (111) by conventional CVD. The growth mechanism of 3C‐SiC (111) epitaxial films has also been proposed.

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

“…The rough interface had been observed in 3C-SiC (110)/Si (110) epigrowth, while a flat interface leads to 3C-SiC (111)/Si (110) epi-growth had been investigated in present study (Figure 9) and researches. 16,23,27 The same tendency of the relationship between interfacial roughness and orientation switch had been investigated on Si (110) single crystal substrate 21 and Si (110) epi-layer. 23 The combined effects of laser and H 2 played important roles on modifying the Si (110) surface with rough texture.…”

“…The 3C-SiC grown on Si (110) always showed the <111> orientation in Ar atmosphere in our previous research. 27 Pole figure of 3C-SiC films and Si substrate were conducted to get a deep understanding of epi-growth behavior in the case of <110>-oriented 3C-SiC grown on Si (110). In pole figure process, the 2θ = 35.7°and 28.4°were fixed to get the diffraction from defined {111} plane of 3C-SiC and Si, respectively.…”

“…The hexagonal structure was the typical morphology of <111> orientation growth, as mark in the right-corner of Figure 6D, which has been detail discussed in our previous study. 11,27 In the present study, we consider the | 4485 transition in shape of <110>-3C-SiC nucleation and growth on Si (110). Figure 6E shows the (110) plane view and (1-10) cross-section view of <110>-3C-SiC growth.…”

“…Whereas in our previous study, the flat interface between 3C-SiC (111) and Si (110) was observed by LCVD with Ar as diluted gas. 27 The effect of T dep on interfacial texture and 3C-SiC orientations had been discussed in Figure 11. The schematic of 3C-SiC films formed on Si (110) at 1473 and 1573 K are shown in Figure 11A and B, respectively.…”

“…The deposition temperature (T dep ) was measured by an infrared pyrometer (CT laser, 673-1873 K, Optris, Germany). The T dep linearly increased from 1373 to 1573 K with increasing P L from 200 to 320 W. 27 Figure 1 shows a growth procedure for epitaxial 3C-SiC (110) on Si (110) substrate. The source HMDS was evaporated from a stock tank at 298 K and was carried into the deposition chamber with Ar and H 2 gas.…”