Epitaxial growth and electrical performance of graphene/3C–SiC films by laser CVD

Guo, Han; Yang, Xiaoyu; Xu, Qifeng; Lü, Wenzhong; Li, Jun; Dai, Hanren; Ohmori, Hitoshi; Косинова, М. Л.; Yan, Jiasheng; Li, Shusen; Goto, Takashi; Tu, Rong; Zhang, Song

doi:10.1016/j.jallcom.2020.154198

Cited by 16 publications

(4 citation statements)

References 56 publications

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“…Due to the growth mechanism constraints of the precursors, there is uniform coverage over intricate shapes. 98,99 The effect of CVD on the properties of deposited films on a SiC substrate was studied by Guo et al 100 They observed the epitaxial growth of graphene/ epitaxial-SiC on Si. The crystal quality of the film was influenced by the temperature of deposition and addition of SiC composite film to the precursor ratio.…”

Section: Common Deposition Methods Of Gate Oxide Filmsmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented. The SiC material, which is mostly employed as a base component in metal oxide semiconductor field effect transistors is very promising for its high voltage, high power, high temperature, and high breakdown field properties, features which have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs and identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiC/silicon dioxide (SiO2). Reliability as a significant aspect of electronic structures was also discussed with emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.

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Section: Common Deposition Methods Of Gate Oxide Filmsmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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“…The short-range force density between material particles p and i is defined by Eq. (2). where 𝑐 𝑠ℎ = 15c, and 𝑐 = 12𝐸 ∕ (𝜋𝛿 4 )is a peridynamic modulus.…”

Section: ( )mentioning

confidence: 99%

“…The cubic silicon carbide (3C-SiC) has broad application prospects in many fields such as microelectromechanical systems (MEMS), laser, detection and other optoelectronic devices due to its excellent mechanical, chemical, electrical and thermal properties [1][2][3]. In most applications, SiC materials have to undergo contact loads inevitably, which will lead to damage such as cracks in SiC that deteriorate the mechanical properties of SiC devices [4].…”

Section: Introductionmentioning

confidence: 99%

Peridynamic simulations of damage in indentation and scratching of 3C-SiC

Zhu

2022

Journal of Materials Research

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The cubic silicon carbide (3C-SiC) has broad application prospects in many fields due to its excellent material properties. The modeling of damage in 3C-SiC due to contact loads is important yet challenging. In this paper, simulations based on ordinary state-based peridynamics (PD) theory are proposed to model the damage of 3C-SiC in indentation and scratching. The constitutive parameters of 3C-SiC for PD simulation are obtained by performing MD simulations of nanoindentation. It is found that in the indentation simulations the initiation and propagation of cracks are observed, which shows that the PD can model the crack formation and propagation in the indentation process of brittle solid materials. During the scratching process, the variation of friction force is consistent with that of material wear. It is also found that the specific cutting energy increases nonlinearly with the decrease of scratching depth due to size effect. In addition, for the scratching with double indenters, the volume of material removal is more than twice that of scratching with an indenter due to the coupling effect of the two indenters under certain conditions. This paper demonstrates that PD is a powerful tool to investigate the indentation and scratching process of brittle solid materials.

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“…Graphene with a high quality and large area can be prepared on a large scale by CVD; however, the metal substrate or single crystal is expensive, the cost of production is high, and the process is complex. To achieve large-scale industrial production, further research is needed. − …”

Section: Preparation Of Graphenementioning

confidence: 99%

Review of Graphene in Cathode Materials for Lithium-Ion Batteries

Chen

Tian

2021

Energy Fuels

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With the development and progress of science and technology, energy is becoming more and more important. One of the most efficient energy sources is lithium-ion batteries. Graphene is used to improve the rate performance and stability of lithium-ion batteries because of its high surface area ratio, stable chemical properties, and fine electrical and thermal conductivity. In this paper, several common cathode materials of lithium-ion batteries, the preparation methods of graphene, and the combination of graphene and polyanion are reviewed and the research direction of graphene application in cathode materials of lithium-ion batteries is prospected.

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Epitaxial growth and electrical performance of graphene/3C–SiC films by laser CVD

Cited by 16 publications

References 56 publications

Review—Gate Oxide Thin Films Based on Silicon Carbide

Review—Gate Oxide Thin Films Based on Silicon Carbide

Peridynamic simulations of damage in indentation and scratching of 3C-SiC

Review of Graphene in Cathode Materials for Lithium-Ion Batteries

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