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We verify that one-dimensional (1D) Gaussian expression is an appropriate approximation of the vertical doping profile, which is obtained by combining perpendicular ion implantation and rapid thermal annealing (RTA), for short-channel thin-body (20–30 nm) fully depleted (FD) silicon-on-insulator (SOI) MOSFETs. The two-dimensional (2D) potential distribution of the silicon film is derived by adopting the evanescent mode analysis method, in which the potential function is broken into 1D long-channel and 2D short-channel potentials. The threshold voltage model is represented by the minimum front- and back-surface potentials of the silicon film. The application of the threshold voltage model can be extended to a 12 nm channel length. The results obtained using the models match well with the 2D numerical simulation results obtained using the Synopsys Sentaurus Device™. They provide a feasible way of developing new 2D models for nonuniform nanoscale thin-body FD-SOI devices.

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The total ionizing dose (TID) irradiation effects of partially-depleted (PD) silicon-on-insulator (SOI) devices which fabricated with a commercial 0.2 µm SOI process are investigated. Experimental results show an original phenomenon that the "ON" irradiation bias configuration is the worst-case bias for both front-gate and back-gate transistor. To understand the mechanism, a charge distribution model is proposed. We think that the performance degradation of the devices is due to the radiation induced positive charge trapped in the bottom corner of shallow trench isolation (STI) oxide. In addition, comparing the irradiation responses of short and long channel devices under different drain bias, the short channel transistors show a larger degeneration of leakage current and threshold voltage. The dipole theory is introduced to explain the TID enhanced short channel effect.

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs *Peng Chao(彭 超) a) , Hu Zhi-Yuan(胡志远) a) , Ning Bing-Xu(宁冰旭) a) , Huang Hui-Xiang(黄辉祥) a) , Fan Shuang(樊 双) a) , Zhang Zheng-Xuan(张正选) a) † , Bi Da-Wei(毕大炜) a) , and En Yun-Fei(恩云飞) b) a) State