Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

Peng, Chao; Hu, Zhiyuan; Ning, Bingxu; Huang, Huixiang; Fan, Shuang; Zhang, Zhengxuan; Bi, Dawei; En, Yunfei

doi:10.1088/1674-1056/23/9/090702

Cited by 5 publications

(4 citation statements)

References 20 publications

(19 reference statements)

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“…Neither the wide nor narrow devices exhibit a significant radiation-induced off-state leakage current at low drain bias. This is different from the results of previous studies [11][12][13] in PDSOI I/O NMOS where radiation-induced off-state leakage current can be observed obviously at the same TID level even in the case of a lower dose due to a lower body doping. The threshold voltage V th of front-gate transistor is extracted by using the constant current method, [15] and it is de-028501-2 fined as a critical gate voltage where the drain current reaches (W /L) * 10 −7 A.…”

Section: Methodscontrasting

confidence: 99%

“…In our experiment, ON bias configuration is chosen as the irradiation condition which is the worst bias for the STI reported in previous papers. [12,18,19] In that case, the electrical-field lines originating from the gate directly reach the silicon/STI interface where most of the radiation-induced positive charges are trapped. Thus the potential in the silicon is sufficiently modified to embody the negative threshold voltage shift ∆V th .…”

Section: Tcad Device Simulation Analysesmentioning

confidence: 99%

“…[6][7][8][9][10] However, few papers about RINCE in SOI technology have been published. References [11] and [12] focus on the threshold voltage shift and off-state leakage current, and reference [13] is devoted to the study of radiationinduced mobility degradation: in these studies there was a lack of a model to explain the said results. In this paper, we focus on using a mathematical model and TCAD simulations to investigate RINCE in 0.13-µm PDSOI nMOSFET.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation

Zhang

et al. 2018

Chinese Phys. B

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Total ionizing dose responses of different transistor geometries after being irradiated by 60 Co γ-rays, in 0.13-µm partially-depleted silicon-on-insulator (PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor (nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect (RINCE). The analysis based on a charge sharing model and three-dimensional technology computer aided design (TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.

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Section: Methodscontrasting

confidence: 99%

Section: Tcad Device Simulation Analysesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation

Zhang

et al. 2018

Chinese Phys. B

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“…[1] However, when they are exposed to ionizing radiation, the buried oxide becomes positively charged by the radiation-induced trapping holes. [2] The resulting shift in the back gate threshold voltage may adversely affect device operation and circuit performance. [3,4] It has been reported that high fluence ion implantation (such as Al, Si, P or Ge) into the buried oxide can be used to reduce the shift in back gate threshold voltage during exposure to ionizing radiation by creating electron traps with a very large capture cross section and compensating for trapped positive charges when being filled with electrons.…”

Section: Introductionmentioning

confidence: 99%

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Liu¹,

Chen

Liu

et al. 2015

Chinese Phys. B

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Low frequency noise behaviors of partially depleted silicon-on-insulator (PDSOI) n-channel metal-oxide semiconductors (MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from 44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10−10 V2·Hz−1 and 2.7×10−8 V2·Hz−1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017 cm−3·eV−1 to 6.16×1018 cm−3·eV−1. Based on carrier mobility fluctuation theory, the extracted average Hooge’s parameter in these devices increases from 3.92×10−5 to 1.34×10−2 after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are −10.82 V and −31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

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Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs

Peng

et al. 2018

IEEE Trans. Nucl. Sci.

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Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

Cited by 5 publications

References 20 publications

Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation

Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs

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