Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs

Ning, Bingxu; Bi, Dawei; Huang, Huixiang; Zhang, Zhengxuan; Chen, Ming; Zou, Shichang

doi:10.1016/j.mejo.2012.09.004

Cited by 8 publications

(8 citation statements)

References 20 publications

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“…And the samples from group-back show smaller I dsat than the samples from group-front. According to previous studies, [4,16,18] the radiation-induced trapped charges negatively shift the frontgate threshold voltage, then the I dsat increases as TID increases. Hence, we can conclude that the back-gate curves' measurement weakens the TID effect.…”

Section: Influence On Drain Saturation Current and Drain Leakage Currentmentioning

confidence: 73%

“…According to previous studies, [1,6,16] the irradiation under ON bias induces more significant hump and higher drain leakage current, whereas the irradiation under PG bias induces the larger shift of threshold voltage, drain saturation current, and body current. What is very interesting is that the measurement-sequence-induced change of hump and drain leakage current under ON bias are larger than those under PG bias.…”

Section: Comparisons Between On Bias and Pg Biasmentioning

confidence: 78%

“…These are all in agreement with the previous studies. [13,16] However, at the first test, the samples from group-back show more subdued hump than the samples from group-front. As the TID increases, the hump is subdued more significantly.…”

Section: Influence On Front-gate Transfer Characteristic Curvesmentioning

confidence: 98%

“…[1,4] In many studies of TID effect, the characteristics of the front-gate transistor and the characteristics of the back-gate transistor were both analyzed. [4][5][6][7][10][11][12][13][14][15][16][17][18] Hence, both of them were all measured in experiment. In their papers, they only stated that the characteristics of the front-gate transistor and the characteristics of the back-gate transistor were measured before irradiation and after a certain total ionizing dose level.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie¹,

Bi²,

Hu³

et al. 2018

Chinese Phys. B

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The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOS-FET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect. However, the back-gate curves' measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the backgate curves' measurement, which are: Fowler-Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling. The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves' measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.

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Section: Influence On Drain Saturation Current and Drain Leakage Currentmentioning

confidence: 73%

Section: Comparisons Between On Bias and Pg Biasmentioning

confidence: 78%

Section: Influence On Front-gate Transfer Characteristic Curvesmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie¹,

Bi²,

Hu³

et al. 2018

Chinese Phys. B

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show abstract

“…It has also been developed for radiation-hardened applications due to single event upset immunity, which benefits from fully dielectric isolation of shallow trench isolation (STI) and buried oxide (BOX) [1,2]. However, the thick buried oxide induces more complicated total ionizing dose (TID) effect, which has been studied in numerous papers [3,4,5,6,7,8,9,10,11]. With the scale decreasing, the short channel effects emerge [12,13].…”

Section: Introductionmentioning

confidence: 99%

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer

Xie

Zhu

Zhang

et al. 2019

IEICE Electron. Express

Self Cite

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By skillfully applying the voltage bias, we firstly observed radiation-enhanced channel length modulation (CLM) of main transistor in 130 nm partially-depleted SOI nMOSFETs. And we found the radiationenhanced CLM under Pass-Gate bias is more severe than that under ON bias, which reveals that the radiation-induced positive trapped charges in buried oxide is more responsible for this effect. A partially full depletion model is used to interpret this effect. And a TCAD simulation was used to verify our model. Good agreement between simulation and experiment is demonstrated. key words: buried oxide (BOX), channel length modulation (CLM), partially-depleted (PD), silicon-on-insulator (SOI), total-ionizing-dose (TID), trapped charge Classification: Electron devices This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented.

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Extensive thermal-range simulation study of interface traps and oxide charges in an oxide-optimized MOS-capacitive radiation sensor for space applications

Anjankar,

Dhavse

2024

J. Korean Phys. Soc.

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Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs

Cited by 8 publications

References 20 publications

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer

Extensive thermal-range simulation study of interface traps and oxide charges in an oxide-optimized MOS-capacitive radiation sensor for space applications

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